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公开(公告)号:US20210351338A1
公开(公告)日:2021-11-11
申请号:US17137220
申请日:2020-12-29
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Domenico GIUSTI , Carlo Luigi PRELINI , Marco FERRERA , Carla Maria LAZZARI , Luca SEGHIZZI , Nicolo' BONI , Roberto CARMINATI , Fabio QUAGLIA
Abstract: The MEMS actuator is formed by a substrate, which surrounds a cavity; by a deformable structure suspended on the cavity; by an actuation structure formed by a first piezoelectric region of a first piezoelectric material, supported by the deformable structure and configured to cause a deformation of the deformable structure; and by a detection structure formed by a second piezoelectric region of a second piezoelectric material, supported by the deformable structure and configured to detect the deformation of the deformable structure.
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公开(公告)号:US20230070307A1
公开(公告)日:2023-03-09
申请号:US17903473
申请日:2022-09-06
Applicant: STMicroelectronics S.r.l.
Inventor: Domenico GIUSTI , Carla Maria LAZZARI
IPC: F04B43/04
Abstract: A MEMS actuator includes a semiconductor body with a first surface defining a housing cavity facing the first surface and having a bottom surface, the semiconductor body further defining a fluidic channel in the semiconductor body with a first end across the bottom surface. A strainable structure extends into the housing cavity, is coupled to the semiconductor body at the bottom surface, and defines an internal space facing the first end of the fluidic channel and includes at least a first and a second internal subspace connected to each other and to the fluidic channel. When a fluid is pumped through the fluidic channel into the internal space, the first and second internal subspaces expand, thereby straining the strainable structure along the first axis and generating an actuation force exerted by the strainable structure along the first axis, in an opposite direction with respect to the housing cavity.
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公开(公告)号:US20200369029A1
公开(公告)日:2020-11-26
申请号:US16879269
申请日:2020-05-20
Applicant: STMicroelectronics S.r.l.
Inventor: Davide ASSANELLI , Irene MARTINI , Lorenzo VINCIGUERRA , Carla Maria LAZZARI , Paolo FERRARINI
IPC: B41J2/14 , H01L41/047 , H01L41/053 , H01L41/09 , H01L41/187 , H01L41/23 , H01L41/29 , H01L41/332
Abstract: A piezoelectric transducer includes a semiconductor body with a bottom electrode of conductive material. A piezoelectric element is on the bottom electrode. A first protective layer, on the bottom electrode and the piezoelectric element, has a first opening through which a portion of the piezoelectric element is exposed, and a second opening through which a portion of the bottom electrode is exposed. A conductive layer on the first protective layer and within the first and second openings is patterned to form a top electrode in electrical contact with the piezoelectric element at the first opening, a first biasing stripe in electrical contact with the top electrode, and a second biasing stripe in electrical contact with the bottom electrode at the second opening.
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