公开(公告)号：US11670685B2

公开(公告)日：2023-06-06

申请号：US17226003

申请日：2021-04-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simone Rascuná ,  Paolo Badalá ,  Anna Bassi ,  Gabriele Bellocchi

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L29/1606 ,  H01L29/6603 ,  H01L29/66143 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

公开(公告)号：US11728404B2

公开(公告)日：2023-08-15

申请号：US17350916

申请日：2021-06-17

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Paolo Badalá

IPC: H01L29/66 ,  H01L21/285 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/778 ,  H01L21/28 ,  C23C14/00 ,  C23C14/06 ,  C23C14/30 ,  H01L29/417

CPC classification number: H01L29/66462 ,  H01L21/28264 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66431 ,  H01L29/7786 ,  C23C14/0021 ,  C23C14/0641 ,  C23C14/0676 ,  C23C14/30 ,  H01L29/41766

Abstract: An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer.

公开(公告)号：US11605751B2

公开(公告)日：2023-03-14

申请号：US17344558

申请日：2021-06-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simone Rascuná ,  Gabriele Bellocchi ,  Paolo Badalá ,  Isodiana Crupi

IPC: H01L31/10 ,  H01L31/101 ,  H01L31/0224 ,  H01L31/103 ,  H01L31/18

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

公开(公告)号：US12125933B2

公开(公告)日：2024-10-22

申请号：US18181409

申请日：2023-03-09

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Rascuná ,  Gabriele Bellocchi ,  Paolo Badalá ,  Isodiana Crupi

IPC: H01L31/101 ,  H01L31/0224 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/1016 ,  H01L31/022408 ,  H01L31/022466 ,  H01L31/103 ,  H01L31/1812 ,  H01L31/1864 ,  H01L31/1884

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.