公开(公告)号：US11935884B2

公开(公告)日：2024-03-19

申请号：US18060448

申请日：2022-11-30

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS (TOURS) SAS

Inventor： Jean-Michel Simonnet ,  Sophie Ngo ,  Simone Rascuna'

IPC: H01L27/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/417 ,  H01L29/868 ,  H02H9/04

CPC classification number: H01L27/0255 ,  H01L29/04 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/868 ,  H02H9/046

Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.

公开(公告)号：US20170358690A1

公开(公告)日：2017-12-14

申请号：US15671615

申请日：2017-08-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna'

IPC: H01L29/872 ,  H01L23/535 ,  H01L21/768 ,  H01L29/417 ,  H01L21/225 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L29/872 ,  H01L21/2253 ,  H01L21/76897 ,  H01L23/535 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66143

Abstract: A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

公开(公告)号：US11784049B2

公开(公告)日：2023-10-10

申请号：US17190722

申请日：2021-03-03

Applicant: STMicroelectronics S.r.l.

Inventor： Simone Rascuna' ,  Paolo Badala' ,  Anna Bassi ,  Mario Giuseppe Saggio ,  Giovanni Franco

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47

CPC classification number: H01L21/0485 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/47

Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

公开(公告)号：US11177394B2

公开(公告)日：2021-11-16

申请号：US16841536

申请日：2020-04-06

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna'

IPC: H01L29/872 ,  H01L29/417 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L21/225 ,  H01L21/768 ,  H01L23/535 ,  H01L29/20

Abstract: A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

公开(公告)号：US10651319B2

公开(公告)日：2020-05-12

申请号：US16357186

申请日：2019-03-18

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna'

IPC: H01L21/8238 ,  H01L29/872 ,  H01L29/417 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L21/225 ,  H01L21/768 ,  H01L23/535 ,  H01L29/20

Abstract: A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

公开(公告)号：US20170062626A1

公开(公告)日：2017-03-02

申请号：US15059779

申请日：2016-03-03

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Simone Rascuna'

IPC: H01L29/872 ,  H01L21/768 ,  H01L29/16 ,  H01L21/225 ,  H01L29/66 ,  H01L23/535

CPC classification number: H01L29/872 ,  H01L21/2253 ,  H01L21/76897 ,  H01L23/535 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/6606 ,  H01L29/66143

Abstract: A switching device including: a body of semiconductor material, which has a first conductivity type and is delimited by a front surface; a contact layer of a first conductive material, which extends in contact with the front surface; and a plurality of buried regions, which have a second conductivity type and are arranged within the semiconductor body, at a distance from the contact layer.

Abstract translation: 一种开关装置，包括：半导体材料体，其具有第一导电类型并由前表面限定; 第一导电材料的接触层，其与前表面接触地延伸; 以及具有第二导电类型并且布置在半导体主体内的距离接触层一定距离的多个掩埋区域。

公开(公告)号：US12125762B2

公开(公告)日：2024-10-22

申请号：US18052510

申请日：2022-11-03

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Rascuna' ,  Claudio Chibbaro ,  Alfio Guarnera ,  Mario Giuseppe Saggio ,  Francesco Lizio

IPC: H01L21/04 ,  H01L21/56 ,  H01L23/31 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/861 ,  H01L29/872

CPC classification number: H01L23/3171 ,  H01L21/045 ,  H01L21/56 ,  H01L29/1608

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

公开(公告)号：US11854809B2

公开(公告)日：2023-12-26

申请号：US18061795

申请日：2022-12-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Edoardo Zanetti ,  Simone Rascuna' ,  Mario Giuseppe Saggio ,  Alfio Guarnera ,  Leonardo Fragapane ,  Cristina Tringali

IPC: H01L21/04 ,  H01L21/285 ,  H01L29/872 ,  H01L29/66 ,  H01L29/16 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L21/046 ,  H01L21/0495 ,  H01L21/28537 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：US11545362B2

公开(公告)日：2023-01-03

申请号：US17244393

申请日：2021-04-29

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Edoardo Zanetti ,  Simone Rascuna' ,  Mario Giuseppe Saggio ,  Alfio Guarnera ,  Leonardo Fragapane ,  Cristina Tringali

IPC: H01L29/16 ,  H01L21/04 ,  H01L21/285 ,  H01L29/872 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.