公开(公告)号：US20160266415A1

公开(公告)日：2016-09-15

申请号：US15163178

申请日：2016-05-24

Applicant: STMICROELECTRONICS SA

Inventor： JEAN-ROBERT MANOUVRIER

IPC: G02F1/01 ,  G02F1/225 ,  G02F1/025 ,  G01J9/00 ,  G01J9/02

CPC classification number: G02F1/0123 ,  G01J9/00 ,  G01J9/02 ,  G02F1/025 ,  G02F1/218 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/58 ,  G02F2203/50 ,  H04B10/5053 ,  H04B10/50575

Abstract: An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. Two photodiodes are configured to respectively receive the optical output powers of the two channels of the directional coupler. An electrical circuit is configured to supply, as a measure of the optical phase shift, an electrical signal proportional to the difference between the electrical signals produced by the two photodiodes.

Abstract translation: 光调制器使用光电相位比较器，其被配置为以电信号的形式提供两个光波之间的相位差的量度。 相位比较器包括具有两个耦合通道的光学定向耦合器，该耦合通道分别限定用于接收要比较的两个光波的两个光学输入。 两个光电二极管被配置为分别接收定向耦合器的两个通道的光输出功率。 电路被配置为提供与两个光电二极管产生的电信号之间的差成比例的电信号作为光相移的测量。

公开(公告)号：US20160313578A1

公开(公告)日：2016-10-27

申请号：US15198114

申请日：2016-06-30

Applicant: STMICROELECTRONICS SA

Inventor： JEAN-ROBERT MANOUVRIER

IPC: G02F1/025 ,  H01L31/0232 ,  H01L31/11 ,  G02F1/225 ,  G02F1/01

CPC classification number: G02F1/025 ,  G02B6/12 ,  G02F1/2257 ,  H04B10/548

Abstract: A semiconductor electro-optical phase shifter may include an optical action zone configured to be inserted in an optical waveguide, and a bipolar transistor structure configured so that, in operation, collector current of the bipolar transistor structure crosses the optical action zone perpendicular to the axis of the optical waveguide.

Abstract translation: 半导体电光移相器可以包括被配置为插入在光波导中的光学作用区域和双极晶体管结构，其被配置为使得在操作中双极晶体管结构的集电极电流与垂直于轴线的光学作用区域相交 的光波导。

公开(公告)号：US20160370610A1

公开(公告)日：2016-12-22

申请号：US15251236

申请日：2016-08-30

Applicant: STMICROELECTRONICS SA

Inventor： JEAN-ROBERT MANOUVRIER

IPC: G02F1/025 ,  G02F1/01

CPC classification number: G02F1/025 ,  G02F1/0123 ,  G02F1/225 ,  G02F1/2255

Abstract: A semiconductor electro-optical phase shifter may include a substrate, an optical waveguide segment (12) formed on the substrate, and first and second zones of opposite conductivity types configured to form a first bipolar junction perpendicular to the substrate. The phase shifter may also include a dynamic control structure configured to reverse bias the first junction and a static control structure configured to direct a quiescent current in the second zone, parallel to the first junction.

公开(公告)号：US20140156248A1

公开(公告)日：2014-06-05

申请号：US14084727

申请日：2013-11-20

Applicant: STMICROELECTRONICS SA

Inventor： JEAN-ROBERT MANOUVRIER

IPC: G06F17/50

CPC classification number: G06F17/5009 ,  G09B23/18

Abstract: A simulation method for a P-I-N junction photodiode uses a model that may include a diode model configured to characterize electrical behavior of the P-I-N junction photodiode, and an input for applying a fictitious electrical signal representing optical power received by the P-I-N junction photodiode. A current source model may be coupled to the diode model and may have a transient response to a variation of the fictitious electrical signal, based upon a sum of a first first-order transient response with a time constant based upon to a transit time of carriers in a depletion region of the P-I-N junction, and a second first-order transient response with a time constant based upon a diffusion time of carriers outside of the depletion region. The first and second responses may be respectively weighted by a length of the depletion region and a length of the P-I-N junction outside the depletion region.

Abstract translation: 用于P-I-N结光电二极管的模拟方法使用可以包括被配置为表征P-I-N结光电二极管的电气行为的二极管模型的模型，以及用于施加表示由P-I-N结光电二极管接收的光功率的虚拟电信号的输入。 电流源模型可以耦合到二极管模型，并且可以基于第一一阶瞬态响应与基于载波的传输时间的时间常数的和来对虚拟电信号的变化进行瞬态响应 在PIN结的耗尽区和基于耗尽区外的载流子的扩散时间的时间常数的第二一阶瞬态响应。 第一和第二响应可以分别由耗尽区的长度和耗尽区之外的P-I-N结的长度加权。