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公开(公告)号:US20210111109A1
公开(公告)日:2021-04-15
申请号:US17131222
申请日:2020-12-22
Applicant: STMICROELECTRONICS, INC.
Inventor: Rennier RODRIGUEZ , Aiza Marie AGUDON , Maiden Grace MAMING
IPC: H01L23/495 , H01L23/64
Abstract: The present disclosure is directed to a flat no-lead semiconductor package with a surfaced mounted structure. An end portion of the surface mounted structure includes a recessed member so that the surface mounted structure is coupled to leads of the flat no-lead semiconductor package through, among others, the sidewalls of the recessed members.
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公开(公告)号:US20210183750A1
公开(公告)日:2021-06-17
申请号:US17185742
申请日:2021-02-25
Applicant: STMicroelectronics, Inc.
Inventor: Rennier RODRIGUEZ , Aiza Marie AGUDON , Jefferson TALLEDO , Moonlord MANALO , Ela Mia CADAG , Rammil SEGUIDO
IPC: H01L23/495 , H01L23/31 , H01L21/48 , H01L21/56
Abstract: The present disclosure is directed to a leadframe having a recess in a body of the leadframe to collect glue overflowing from the manufacturing process of coupling a semiconductor die to the leadframe. The recess extends beneath an edge of the semiconductor die so that any tendency of the glue to adhere to the semiconductor die is counteracted by a tendency of the glue to adhere to a wall of the recess and at least partially fill the volume of the recess. In addition, the recess for collecting adhesive may also form a mold lock on an edge of the leadframe, the mold lock providing a more durable connection between the leadframe and an encapsulant during physical and temperature stresses.
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公开(公告)号:US20210151368A1
公开(公告)日:2021-05-20
申请号:US17139669
申请日:2020-12-31
Applicant: STMICROELECTRONICS, INC.
Inventor: Rennier RODRIGUEZ , Aiza Marie AGUDON , Maiden Grace MAMING
IPC: H01L23/495 , H01L23/64
Abstract: The present disclosure is directed to a flat no-lead semiconductor package with a surfaced mounted structure. An end portion of the surface mounted structure includes a recessed member so that the surface mounted structure is coupled to leads of the flat no-lead semiconductor package through, among others, the sidewalls of the recessed members.
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公开(公告)号:US20180204786A1
公开(公告)日:2018-07-19
申请号:US15408979
申请日:2017-01-18
Applicant: STMicroelectronics, Inc.
Inventor: Rennier RODRIGUEZ , Aiza Marie AGUDON , Jefferson TALLEDO
IPC: H01L23/495 , H01L21/683 , H01L23/00 , H01L23/58 , H01L21/78
Abstract: The present disclosure is directed to a die having a metallized sidewall and methods of manufacturing the same. A contiguous metal layer is applied to each edge of a backside of a wafer. The wafer is cut at a base of a plurality of channels formed in the backside to create individual die each having a flange that is part of a sidewall of the die and includes a portion that is covered by the metal layer. When an individual die is coupled to a die pad, a semiconductive glue bonds the metal layer on the sidewall and a backside of the die to the die pad, which decreases the risk of delamination along the sides of the die. The flange also prevents the glue from contacting the active side of the die by acting as a barrier against adhesive creep of the glue up the sidewall of the die.
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公开(公告)号:US20170263566A1
公开(公告)日:2017-09-14
申请号:US15068752
申请日:2016-03-14
Applicant: STMICROELECTRONICS, INC
Inventor: Rennier RODRIGUEZ , Frederick ARELLANO , Aiza Marie AGUDON
CPC classification number: H01L23/552 , H01L21/4814 , H01L21/561 , H01L21/78 , H01L23/29 , H01L23/3121 , H01L23/3135 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2224/16227 , H01L2224/2919 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/97 , H01L2924/3025 , H01L2924/00012 , H01L2224/83 , H01L2224/85 , H01L2224/81
Abstract: A method for making shielded integrated circuit (IC) packages includes providing spaced apart IC dies carried by a substrate and covered by a common encapsulating material, and cutting through the common encapsulating material between adjacent IC dies to define spaced apart IC packages carried by the substrate. An electrically conductive layer is positioned over the spaced apart IC packages and fills spaces between adjacent IC packages. The method further includes cutting through the electrically conductive layer between adjacent IC packages and through the substrate to form the shielded IC packages.
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