公开(公告)号：US10388772B2

公开(公告)日：2019-08-20

申请号：US16013095

申请日：2018-06-20

Applicant: STMicroelectronics, Inc.

Inventor： Qing Liu ,  Salih Muhsin Celik

IPC: H01L21/04 ,  H01L29/66 ,  H01L29/165 ,  H01L29/78 ,  H01L29/51 ,  H01L29/06 ,  H01L29/739 ,  H01L29/08 ,  H01L29/49

Abstract: A tunneling field effect transistor is formed from a fin of semiconductor material on a support substrate. The fin of semiconductor material includes a source region, a drain region and a channel region between the source region and drain region. A gate electrode straddles over the fin at the channel region. Sidewall spacers are provided on each side of the gate electrode. The source of the transistor is made from an epitaxial germanium content source region grown from the source region of the fin and doped with a first conductivity type. The drain of the transistor is made from an epitaxial silicon content drain region grown from the drain region of the fin and doped with a second conductivity type.

公开(公告)号：US20180301547A1

公开(公告)日：2018-10-18

申请号：US16013095

申请日：2018-06-20

Applicant: STMicroelectronics, Inc.

Inventor： Qing Liu ,  Salih Muhsin Celik

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/165 ,  H01L29/78 ,  H01L29/51 ,  H01L29/739

CPC classification number: H01L29/66977 ,  H01L29/0649 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/165 ,  H01L29/4941 ,  H01L29/513 ,  H01L29/516 ,  H01L29/66356 ,  H01L29/7391 ,  H01L29/785 ,  H01L29/7851

Abstract: A tunneling field effect transistor is formed from a fin of semiconductor material on a support substrate. The fin of semiconductor material includes a source region, a drain region and a channel region between the source region and drain region. A gate electrode straddles over the fin at the channel region. Sidewall spacers are provided on each side of the gate electrode. The source of the transistor is made from an epitaxial germanium content source region grown from the source region of the fin and doped with a first conductivity type. The drain of the transistor is made from an epitaxial silicon content drain region grown from the drain region of the fin and doped with a second conductivity type.

公开(公告)号：US10026830B2

公开(公告)日：2018-07-17

申请号：US14698921

申请日：2015-04-29

Applicant: STMicroelectronics, Inc.

Inventor： Qing Liu ,  Salih Muhsin Celik

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/165 ,  H01L29/78 ,  H01L29/51 ,  H01L29/06 ,  H01L29/739

Abstract: A tunneling field effect transistor is formed from a fin of semiconductor material on a support substrate. The fin of semiconductor material includes a source region, a drain region and a channel region between the source region and drain region. A gate electrode straddles over the fin at the channel region. Sidewall spacers are provided on each side of the gate electrode. The source of the transistor is made from an epitaxial germanium content source region grown from the source region of the fin and doped with a first conductivity type. The drain of the transistor is made from an epitaxial silicon content drain region grown from the drain region of the fin and doped with a second conductivity type.

公开(公告)号：US20160322479A1

公开(公告)日：2016-11-03

申请号：US14698921

申请日：2015-04-29

Applicant: STMicroelectronics, Inc.

Inventor： Qing Liu ,  Salih Muhsin Celik

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/51 ,  H01L29/165 ,  H01L29/78

CPC classification number: H01L29/66977 ,  H01L29/0649 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/165 ,  H01L29/4941 ,  H01L29/513 ,  H01L29/516 ,  H01L29/66356 ,  H01L29/7391 ,  H01L29/7851

Abstract: A tunneling field effect transistor is formed from a fin of semiconductor material on a support substrate. The fin of semiconductor material includes a source region, a drain region and a channel region between the source region and drain region. A gate electrode straddles over the fin at the channel region. Sidewall spacers are provided on each side of the gate electrode. The source of the transistor is made from an epitaxial germanium content source region grown from the source region of the fin and doped with a first conductivity type. The drain of the transistor is made from an epitaxial silicon content drain region grown from the drain region of the fin and doped with a second conductivity type.

Abstract translation: 隧道场效应晶体管由支撑基板上的半导体材料的翅片形成。 半导体材料的鳍片包括源极区域，漏极区域和源极区域与漏极区域之间的沟道区域。 栅极电极横跨在通道区域上的翅片上。 在栅电极的每一侧设置侧壁间隔物。 晶体管的源极由从鳍片的源极区域生长并掺杂有第一导电类型的外延锗含量源区域制成。 晶体管的漏极由从鳍片的漏极区域生长并掺杂有第二导电类型的外延硅含量漏极区域制成。