公开(公告)号：US20230361064A1

公开(公告)日：2023-11-09

申请号：US18311779

申请日：2023-05-03

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Marion CROISY ,  Sylvie DEL MEDICO

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L24/05 ,  H01L23/3192 ,  H01L21/56 ,  H01L24/13 ,  H01L24/45 ,  H01L2224/05647 ,  H01L2224/04042 ,  H01L2224/0401 ,  H01L2224/13147 ,  H01L2224/45147

Abstract: The present description relates to a method of manufacturing an end of an interconnection structure of an integrated circuit, the method including: providing an integrated circuit including an interconnection structure including copper interconnection elements at least partly extending through an insulating layer and flush with a first surface of said interconnection structure; forming a protection layer on the first surface of the interconnection structure, said protection layer including a material adapted to protecting the copper of the interconnection elements; forming a passivation layer on the protection layer, the passivation layer having a first thickness; and forming a first opening in the passivation layer across a second thickness smaller than the first thickness, to keep a residual passivation layer at the bottom of the first opening.