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公开(公告)号：US20230369359A1
公开(公告)日：2023-11-16
申请号：US18225298
申请日：2023-07-24
发明人： Francois GUYADER , Sara PELLEGRINI , Bruce RAE
IPC分类号： H01L27/146 , H01L31/107 , G01J1/44
CPC分类号： H01L27/1461 , H01L31/107 , H04N25/70 , H01L27/14634 , G01J1/44 , G01J2001/4466
摘要： An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.
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公开(公告)号：US20220115419A1
公开(公告)日：2022-04-14
申请号：US17498286
申请日：2021-10-11
发明人： Francois GUYADER , Sara PELLEGRINI , Bruce RAE
IPC分类号： H01L27/146 , H01L31/107 , H04N5/369 , G01J1/44
摘要： An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.
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公开(公告)号：US20240014342A1
公开(公告)日：2024-01-11
申请号：US18220082
申请日：2023-07-10
IPC分类号： H01L31/107 , H01L31/02 , H01L21/762 , H01L31/0352
CPC分类号： H01L31/107 , H01L31/02027 , H01L21/76232 , H01L31/035281 , H01L27/1446
摘要： A device includes a single photon avalanche diode in a substrate and a resistor. The resistor is provided resting on an insulating trench located in a doped anode region of the single photon avalanche diode.
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公开(公告)号：US20240063235A1
公开(公告)日：2024-02-22
申请号：US18386859
申请日：2023-11-03
发明人： Francois GUYADER , Sara PELLEGRINI , Bruce RAE
IPC分类号： H01L27/146 , G01J1/44 , H01L31/107 , H04N25/70
CPC分类号： H01L27/1461 , G01J1/44 , H01L27/14634 , H01L31/107 , H04N25/70 , G01J2001/4466
摘要： An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.
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公开(公告)号：US20240014341A1
公开(公告)日：2024-01-11
申请号：US18220069
申请日：2023-07-10
IPC分类号： H01L31/107 , H01L27/146 , H01L31/02 , H01L31/0352
CPC分类号： H01L31/107 , H01L27/14643 , H01L31/02027 , H01L27/1463 , H01L31/035281
摘要： A device includes a single photon avalanche diode in a portion of a substrate, wherein the portion has an octagonal profile. The octagonal profile is delimited by a wall forming an octagonal contour around the portion. The device further includes an array of diodes, wherein each diode is located in a corner between four adjacent single photon avalanche diodes. Each single photon avalanche diode further includes a doped anode region. A shallow trench isolation is formed in each doped anode region. A polysilicon line forming a resistor is supported at the upper surface of the shallow trench isolation.
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