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    LIGHT SENSOR
    5.
    发明申请
    LIGHT SENSOR 有权

    公开(公告)号：US20220341779A1

    公开(公告)日：2022-10-27

    申请号：US17660321

    申请日：2022-04-22

    申请人： STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED ,  STMicroelectronics (Grenoble 2) SAS

    发明人： Jeffrey M. Raynor ,  Nicolas Moeneclaey

    IPC分类号： G01J1/44

    摘要： The present disclosure relates to a sensor having pixels, each pixel having photodiodes having each a terminal coupled to a first node associated with the photodiode; and an amplifier having a first part and, for each photodiode, a second part associated with the photodiode. The first part includes an output of the amplifier and a first MOS transistor of a differential pair. Each second part includes a second MOS transistor of the differential pair having its gate coupled to the first node associated with the photodiode the second part is associated with; a first switch coupling a source of the second transistor to the first part of the amplifier; and a second switch coupling a drain of the second transistor to the first part of the amplifier.

    AMBIENT LIGHT SENSOR
    7.
    发明公开
    AMBIENT LIGHT SENSOR 审中-公开

    公开(公告)号：US20240151579A1

    公开(公告)日：2024-05-09

    申请号：US18492903

    申请日：2023-10-24

    申请人： STMicroelectronics (Research & Development) Limited

    发明人： Jeffrey M. Raynor

    IPC分类号： G01J1/42 ,  G01J1/44

    CPC分类号： G01J1/4204 ,  G01J1/44 ,  G01J2001/446

    摘要： A common centroid ambient light sensor includes a matrix of photodiodes having exactly a first row and a second row, at least three color channels, a readout circuit of the first color channel connected to exactly one photodiode in the first row and exactly one photodiode in the second row, and a readout circuit of the second color channel connected to exactly one photodiode in the first row and exactly one photodiode in the second row.

    High voltage generation using reconfigurable photodiodes in pixel array
    8.
    发明授权
    High voltage generation using reconfigurable photodiodes in pixel array 有权

    公开(公告)号：US11502116B2

    公开(公告)日：2022-11-15

    申请号：US16583482

    申请日：2019-09-26

    申请人： STMicroelectronics (Research & Development) Limited

    发明人： Filip Kaklin ,  Jeffrey M. Raynor

    IPC分类号： H01L27/142 ,  H01L27/146

    摘要： An imaging sensor includes a pixel array containing photodiodes, the photodiodes being isolated from one another by full thickness deep trench isolations. Row control circuitry controls which rows of the pixel array operate in an imaging mode and which rows of the pixel array operate in an energy harvesting mode, on a row by row basis. Switch circuitry selectively connects different groups of photodiodes in rows operating in the energy harvesting mode into forward biased series configurations between a voltage output line and a ground line, or into forward biased parallel configurations between the voltage output line and the ground line.

    Global shutter pixels having shared isolated storage capacitors within an isolation structure surrounding the perimeter of a pixel array
    10.
    发明授权
    Global shutter pixels having shared isolated storage capacitors within an isolation structure surrounding the perimeter of a pixel array 有权

    公开(公告)号：US10263021B2

    公开(公告)日：2019-04-16

    申请号：US15376357

    申请日：2016-12-12

    申请人： STMicroelectronics (Research & Development) Limited

    发明人： Jeffrey M. Raynor

    IPC分类号： H01L27/146 ,  H04N5/3745

    摘要： Disclosed herein is an electronic device including an integrated circuit substrate, with a pixel array area within the integrated circuit substrate. A first deep trench isolation structure is formed in the integrated circuit substrate about a perimeter of the pixel array area. First, second, third, and fourth pixels are within the pixel array area and spaced apart from one another. A storage capacitor area is within the integrated circuit substrate and interior to the first deep trench isolation structure. A second deep trench isolation structure is formed in the integrated circuit substrate about a perimeter of the storage capacitor area. The second deep trench isolation structure may serve to electrically isolate the storage capacitor area from the first, second, third, and fourth pixels.