公开(公告)号：US20230299127A1

公开(公告)日：2023-09-21

申请号：US18180025

申请日：2023-03-07

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Francois TAILLIET ,  Loic WELTER ,  Maria-Paz DUMITRESCU ,  Roberto SIMOLA

IPC: H01L29/06 ,  H01L29/78 ,  H01L27/092 ,  H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L21/28 ,  H01L29/788 ,  H01L21/762 ,  H10B41/10 ,  H10B41/35

CPC classification number: H01L29/0607 ,  H01L29/7835 ,  H01L27/0922 ,  H01L29/6659 ,  H01L29/402 ,  H01L29/42324 ,  H01L29/40114 ,  H01L29/66825 ,  H01L29/7883 ,  H01L21/76224 ,  H10B41/10 ,  H10B41/35

Abstract: The integrated circuit comprises at least one transistor including a separate gate structure and field plate, disposed on a front face of a semiconductor substrate, and a doped conduction region in the semiconductor substrate located plumb with an edge of the gate structure and plumb with an edge of the field plate.