公开(公告)号：US20150137880A1

公开(公告)日：2015-05-21

申请号：US14548386

申请日：2014-11-20

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Bertrand RIVET ,  David JOUVE

IPC: G05F1/613 ,  G05F1/46

CPC classification number: G05F1/613 ,  G05F1/468 ,  H03K17/102

Abstract: A circuit for balancing a voltage across a semiconductor element series-connected with other semiconductor elements of the same type may include a comparator configured to compare data representative of a voltage across the semiconductor element with a reference voltage, and a resistive element of adjustable value and configured to be controlled by the comparator.

Abstract translation: 用于平衡与相同类型的其它半导体元件串联连接的半导体元件上的电压的电路可以包括比较器，其被配置为将表示半导体元件两端的电压的参考电压与可调整值的电阻元件进行比较， 配置为由比较器控制。

公开(公告)号：US20160181907A1

公开(公告)日：2016-06-23

申请号：US14838519

申请日：2015-08-28

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Bertrand RIVET ,  David Jouve

IPC: H02M1/088

CPC classification number: H05B33/0887 ,  G05F1/577 ,  H03K17/12 ,  H03K17/14 ,  H03K17/74 ,  H05B33/0815

Abstract: A circuit is for balancing currents flowing through a parallel assembly of semiconductor components of the same type. The circuit may include a respective regulation circuit for each semiconductor component. Each regulation circuit may include a comparator of a first signal representative of the current flowing through the component with a reference signal, and a resistive element of a changeable resistance and controlled by the comparator.

Abstract translation: 电路用于平衡流过相同类型的半导体部件的并联组件的电流。 电路可以包括用于每个半导体部件的相应调节电路。 每个调节电路可以包括代表通过参考信号流过组件的电流的第一信号的比较器和可变电阻并由比较器控制的电阻元件。

公开(公告)号：US20240113704A1

公开(公告)日：2024-04-04

申请号：US18371622

申请日：2023-09-22

Applicant: STMicroelectronics (Tours) SAS

Inventor： Diawoye CISSE ,  Bertrand RIVET ,  Frederic GAUTIER

IPC: H03K17/06 ,  H02M1/08

CPC classification number: H03K17/063 ,  H02M1/08 ,  H02M3/156

Abstract: A method for controlling a MOS transistor compares a first voltage between a drain and a source of the MOS transistor to a second controllable threshold voltage. When the first voltage is smaller than a third voltage, a fourth control voltage is applied to the MOS transistor that is greater than a fifth threshold voltage of the MOS transistor. When the first voltage is greater than the second voltage, the fourth control voltage applied to the MOS transistor is smaller than the fifth voltage. The second voltage is equal to a first constant value between a first time and a second time, and is equal to a second variable value between the second time and a third time. The second value is equal to a sum of the first voltage and a sixth positive voltage. The third time corresponds to a time when the first voltage inverts.