Reversible AC-DC and DC-AC thyristor converter

    公开(公告)号:US10483874B2

    公开(公告)日:2019-11-19

    申请号:US16020431

    申请日:2018-06-27

    Abstract: A reversible converter includes a first field effect transistor and a second field effect transistor coupled in series between a first terminal and a second terminal for a DC voltage. A first thyristor and a second thyristor are coupled in series between the first and second terminals for the DC voltage. A third thyristor and a fourth thyristor are also coupled in series between the first and second terminals for the DC voltage terminals, but have an opposite connection polarity with respect to the first and second thyristors. A midpoint of connection between the first and second field effect transistors and a common midpoint of connection between the first and second thyristors and the third and fourth thyristors are coupled to AC voltage terminals. Actuation of the transistors and thyristors is controlled in distinct manners to operate the converter in an AC-DC conversion mode and a DC-AC conversion mode.

    Unidirectional transient voltage suppression device

    公开(公告)号:US12009658B2

    公开(公告)日:2024-06-11

    申请号:US17661352

    申请日:2022-04-29

    CPC classification number: H02H9/046 H01L27/0255 H02H9/005

    Abstract: The present disclosure relates to a transient voltage suppression device comprising a single crystal semiconductor substrate doped with a first conductivity type comprising first and second opposing surfaces, a semiconductor region doped with a second conductivity type opposite to the first conductivity type extending into the substrate from the first surface, a first electrically conductive electrode on the first side contacting the semiconductor region and a second electrically conductive electrode on the second side contacting the substrate, a first interface between the substrate and the semiconductor region forming the junction of a TVS diode and a second interface between the first electrically conductive electrode and the semiconductor region or between the substrate and the second electrically conductive electrode forming the junction of a Schottky diode.

    System for balancing the voltage of series-connected semiconductor elements
    4.
    发明授权
    System for balancing the voltage of series-connected semiconductor elements 有权
    用于平衡串联半导体元件的电压的系统

    公开(公告)号:US09541936B2

    公开(公告)日:2017-01-10

    申请号:US14548386

    申请日:2014-11-20

    CPC classification number: G05F1/613 G05F1/468 H03K17/102

    Abstract: A circuit for balancing a voltage across a semiconductor element series-connected with other semiconductor elements of the same type may include a comparator configured to compare data representative of a voltage across the semiconductor element with a reference voltage, and a resistive element of adjustable value and configured to be controlled by the comparator.

    Abstract translation: 用于平衡与相同类型的其它半导体元件串联连接的半导体元件上的电压的电路可以包括比较器,其被配置为将表示半导体元件两端的电压的参考电压与可调整值的电阻元件进行比较, 配置为由比较器控制。

    CURRENT BALANCING SYSTEM FOR SEMICONDUCTOR ELEMENTS IN PARALLEL
    5.
    发明申请
    CURRENT BALANCING SYSTEM FOR SEMICONDUCTOR ELEMENTS IN PARALLEL 审中-公开
    平行半导体元件的平衡平衡系统

    公开(公告)号:US20160181907A1

    公开(公告)日:2016-06-23

    申请号:US14838519

    申请日:2015-08-28

    Abstract: A circuit is for balancing currents flowing through a parallel assembly of semiconductor components of the same type. The circuit may include a respective regulation circuit for each semiconductor component. Each regulation circuit may include a comparator of a first signal representative of the current flowing through the component with a reference signal, and a resistive element of a changeable resistance and controlled by the comparator.

    Abstract translation: 电路用于平衡流过相同类型的半导体部件的并联组件的电流。 电路可以包括用于每个半导体部件的相应调节电路。 每个调节电路可以包括代表通过参考信号流过组件的电流的第一信号的比较器和可变电阻并由比较器控制的电阻元件。

    UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSION DEVICE

    公开(公告)号:US20220360072A1

    公开(公告)日:2022-11-10

    申请号:US17661352

    申请日:2022-04-29

    Abstract: The present disclosure relates to a transient voltage suppression device comprising a single crystal semiconductor substrate doped with a first conductivity type comprising first and second opposing surfaces, a semiconductor region doped with a second conductivity type opposite to the first conductivity type extending into the substrate from the first surface, a first electrically conductive electrode on the first side contacting the semiconductor region and a second electrically conductive electrode on the second side contacting the substrate, a first interface between the substrate and the semiconductor region forming the junction of a TVS diode and a second interface between the first electrically conductive electrode and the semiconductor region or between the substrate and the second electrically conductive electrode forming the junction of a Schottky diode.

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