公开(公告)号：US20190044454A1

公开(公告)日：2019-02-07

申请号：US16052177

申请日：2018-08-01

Applicant: STMicroelectronics (Tours) SAS

Inventor： Frederic GAUTIER

IPC: H02M7/219 ,  G05F3/20 ,  H02M7/5387

Abstract: A rectifying element includes a MOS transistor series-connected with a Schottky diode. A bias voltage is applied between the control terminal of the MOS transistor and the terminal of the Schottky diode opposite to the transistor. A pair of the rectifying elements are substituted for diodes of a rectifying bridge circuit. Alternatively, the control terminal bias is supplied from a cross-coupling against the Schottky diodes. In another implementation, theSchottky diodes are omitted and the bias voltage applied to control terminals of the MOS transistors is switched in response to cross-coupled divided source-drain voltages of the MOS transistors. The circuits form components of a power converter.

公开(公告)号：US20220069110A1

公开(公告)日：2022-03-03

申请号：US17412556

申请日：2021-08-26

Applicant: STMicroelectronics (Tours) SAS

Inventor： Frederic GAUTIER

IPC: H01L29/739 ,  H01L27/07 ,  H01L29/872

Abstract: A device includes a controllable current source connected between a first node and a first terminal coupled to a cathode of a controllable diode. A capacitor is connected between the first node and a second terminal coupled to an anode of the controllable diode. A first switch is connected between the first node and a third terminal coupled to a gate of the controllable diode. A second switch is connected between the second and third terminals. A first diode is connected between the third terminal and the second terminal, an anode of the first diode being preferably coupled to the third terminal.

公开(公告)号：US20240113704A1

公开(公告)日：2024-04-04

申请号：US18371622

申请日：2023-09-22

Applicant: STMicroelectronics (Tours) SAS

Inventor： Diawoye CISSE ,  Bertrand RIVET ,  Frederic GAUTIER

IPC: H03K17/06 ,  H02M1/08

CPC classification number: H03K17/063 ,  H02M1/08 ,  H02M3/156

Abstract: A method for controlling a MOS transistor compares a first voltage between a drain and a source of the MOS transistor to a second controllable threshold voltage. When the first voltage is smaller than a third voltage, a fourth control voltage is applied to the MOS transistor that is greater than a fifth threshold voltage of the MOS transistor. When the first voltage is greater than the second voltage, the fourth control voltage applied to the MOS transistor is smaller than the fifth voltage. The second voltage is equal to a first constant value between a first time and a second time, and is equal to a second variable value between the second time and a third time. The second value is equal to a sum of the first voltage and a sixth positive voltage. The third time corresponds to a time when the first voltage inverts.

公开(公告)号：US20230275526A1

公开(公告)日：2023-08-31

申请号：US18144639

申请日：2023-05-08

Applicant: STMicroelectronics (Tours) SAS

Inventor： Frederic GAUTIER

IPC: H02M7/219 ,  H02M7/5387 ,  G05F3/20 ,  H02M7/217

CPC classification number: H02M7/219 ,  H02M7/5387 ,  G05F3/20 ,  H02M7/217 ,  H02M1/0032

Abstract: A rectifying element includes a MOS transistor series-connected with a Schottky diode. A bias voltage is applied between the control terminal of the MOS transistor and the terminal of the Schottky diode opposite to the transistor. A pair of the rectifying elements are substituted for diodes of a rectifying bridge circuit. Alternatively, the control terminal bias is supplied from a cross-coupling against the Schottky diodes. In another implementation, the Schottky diodes are omitted and the bias voltage applied to control terminals of the MOS transistors is switched in response to cross-coupled divided source-drain voltages of the MOS transistors. The circuits form components of a power converter.

公开(公告)号：US20200186052A1

公开(公告)日：2020-06-11

申请号：US16793521

申请日：2020-02-18

Applicant: STMicroelectronics (Tours) SAS

Inventor： Frederic GAUTIER

IPC: H02M7/219 ,  H02M7/217 ,  G05F3/20 ,  H02M7/5387

Abstract: A rectifying element includes a MOS transistor series-connected with a Schottky diode. A bias voltage is applied between the control terminal of the MOS transistor and the terminal of the Schottky diode opposite to the transistor. A pair of the rectifying elements are substituted for diodes of a rectifying bridge circuit. Alternatively, the control terminal bias is supplied from a cross-coupling against the Schottky diodes. In another implementation, the Schottky diodes are omitted and the bias voltage applied to control terminals of the MOS transistors is switched in response to cross-coupled divided source-drain voltages of the MOS transistors. The circuits form components of a power converter.