公开(公告)号：US20210184490A1

公开(公告)日：2021-06-17

申请号：US17118028

申请日：2020-12-10

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics, Inc.

Inventor： Mathieu ROUVIERE ,  Jeffrey BLAUSER, JR. ,  Karl GRANGE ,  Mohamed SAADNA

IPC: H02J7/34 ,  G06F1/26 ,  G06F13/42 ,  G06F1/3234

Abstract: A power supply interface includes a first switch that couples an input terminal to an output terminal. A voltage dividing bridge is coupled to receive a supply potential. A comparator has a first input connected to a first node of the bridge and a second input configured to receive a constant potential. A digital-to-analog converter generates a control voltage that is selectively coupled by a second switch to a second node of the bridge. A circuit control controls actuation of the second switch based on operating mode and generates a digital value input to the converter based on a negotiated set point of the supply potential applied to the input terminal.

公开(公告)号：US20240021604A1

公开(公告)日：2024-01-18

申请号：US18478465

申请日：2023-09-29

Applicant: STMICROELECTRONICS APPLICATION GMBH ,  STMICROELECTRONICS (TOURS) SAS

Inventor： Mathieu ROUVIERE ,  Arnaud YVON ,  Mohamed SAADNA ,  Vladimir SCARPA

IPC: H01L27/06 ,  H01L21/02 ,  H01L21/8252 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778 ,  H01L29/872

CPC classification number: H01L27/0629 ,  H01L21/0254 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/40 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

Abstract: A monolithic component includes a field-effect power transistor and at least one first Schottky diode inside and on top of a gallium nitride substrate.