公开(公告)号：US20210184490A1

公开(公告)日：2021-06-17

申请号：US17118028

申请日：2020-12-10

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics, Inc.

Inventor： Mathieu ROUVIERE ,  Jeffrey BLAUSER, JR. ,  Karl GRANGE ,  Mohamed SAADNA

IPC: H02J7/34 ,  G06F1/26 ,  G06F13/42 ,  G06F1/3234

Abstract: A power supply interface includes a first switch that couples an input terminal to an output terminal. A voltage dividing bridge is coupled to receive a supply potential. A comparator has a first input connected to a first node of the bridge and a second input configured to receive a constant potential. A digital-to-analog converter generates a control voltage that is selectively coupled by a second switch to a second node of the bridge. A circuit control controls actuation of the second switch based on operating mode and generates a digital value input to the converter based on a negotiated set point of the supply potential applied to the input terminal.

公开(公告)号：US20240021604A1

公开(公告)日：2024-01-18

申请号：US18478465

申请日：2023-09-29

Applicant: STMICROELECTRONICS APPLICATION GMBH ,  STMICROELECTRONICS (TOURS) SAS

Inventor： Mathieu ROUVIERE ,  Arnaud YVON ,  Mohamed SAADNA ,  Vladimir SCARPA

IPC: H01L27/06 ,  H01L21/02 ,  H01L21/8252 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778 ,  H01L29/872

CPC classification number: H01L27/0629 ,  H01L21/0254 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/40 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

Abstract: A monolithic component includes a field-effect power transistor and at least one first Schottky diode inside and on top of a gallium nitride substrate.

公开(公告)号：US20190326276A1

公开(公告)日：2019-10-24

申请号：US16388191

申请日：2019-04-18

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mathieu ROUVIERE

IPC: H01L27/02 ,  H01L29/866

Abstract: An electrostatic discharge protection circuit includes a diode bridge in parallel with a thyristor and a first avalanche diode. The diode bridge is coupled between first and second nodes. The thyristor has an anode coupled to the first node and a cathode coupled to the second node. The first avalanche diode has a cathode coupled to the first node and an anode coupled to the second node. A second avalanche diode has a cathode coupled to the first node and an anode coupled to a gate of the thyristor. When an electrostatic discharge occurs, current flows through the diode bridge, into the first node, and is first dissipated by the avalanche diode and is thereafter also dissipated by the thyristor once the thyristor turns on.

公开(公告)号：US20190296545A1

公开(公告)日：2019-09-26

申请号：US16358964

申请日：2019-03-20

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mathieu ROUVIERE

IPC: H02H9/04 ,  H01L27/02

Abstract: A circuit for protecting against electrostatic discharges includes two avalanche circuit components having different turn-on delays with respect to a beginning of an electrostatic discharge. The two avalanche circuit components are coupled in parallel. The avalanche circuit component closer to an output node has a turn-on delay on the order of 30 ns, while the avalanche circuit component closer to an input node has a turn-on delay on the order of 1 ns.

公开(公告)号：US20190019687A1

公开(公告)日：2019-01-17

申请号：US16033334

申请日：2018-07-12

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mathieu ROUVIERE ,  Mohamed BOUFNICHEL ,  Eric LACONDE

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/3105

Abstract: Laterally insulated integrated circuit chips are fabricated from a semiconductor wafer. Peripheral trenches are formed in the wafer which laterally delimit integrated circuit chips to be formed. A depth of the peripheral trenches is greater than or equal to a desired final thickness of the integrated circuit chips. The peripheral trenches are formed by a process which repeats successive steps of a) ion etching using a sulfur hexafluoride plasma, and b) passivating using an octafluorocyclobutane plasma. Upon completion of the step of forming the peripheral trenches, lateral walls of the peripheral trenches are covered by an insulating layer of a polyfluoroethene. A thinning step is performed on the lower surface of the wafer until a bottom of the peripheral trenches is reached. The insulating layer is not removed.

公开(公告)号：US20160276826A1

公开(公告)日：2016-09-22

申请号：US14925001

申请日：2015-10-28

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Jérôme HEURTIER ,  Guillaume BOUGRINE ,  Mathieu ROUVIERE

IPC: H02H9/04

CPC classification number: H02H9/04 ,  H02H9/041 ,  H02H9/042 ,  H02H9/043

Abstract: A device may be for protection against overvoltages in a power supply line. The device may include a breakover diode, an avalanche diode coupled in series with the breakover diode, and a switch coupled in parallel with the breakover diode and the avalanche diode. The device may also include a circuit coupled across the avalanche diode and configured to control the switch.

Abstract translation: 设备可以用于防止电源线中的过电压。 该装置可以包括分解二极管，与断流二极管串联耦合的雪崩二极管，以及与断流二极管和雪崩二极管并联耦合的开关。 该装置还可以包括耦合在雪崩二极管两端并被配置为控制开关的电路。