公开(公告)号：US20030214856A1

公开(公告)日：2003-11-20

申请号：US10372639

申请日：2003-02-20

Applicant: STMicroelectronics S. r. I. ,  OVONYX Inc.

Inventor： Fabio Pellizzer ,  Agostino Pirovano

IPC: G11C007/00

CPC classification number: G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691

Abstract: The phase change memory cell is formed by a resistive element and by a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction which is transverse to said first direction. The first and second thin portions are in direct electrical contact and define a contact area having sublithographic extent. The second thin portion is formed in a slit of sublithographic dimensions. According to a first solution, oxide spacer portions are formed in a lithographic opening, delimited by a mold layer. According to a different solution, a sacrificial region is formed on top of a mold layer and is used for forming the sublithographic slit in the mold layer.

Abstract translation: 相变存储单元由电阻元件和相变材料的存储区形成。 电阻元件具有在第一方向上具有第一亚光刻尺寸的第一薄部分; 并且所述存储区具有第二薄部，所述第二薄部在与所述第一方向横切的第二方向上具有第二亚光刻尺寸。 第一和第二薄部分是直接电接触并限定具有亚光刻范围的接触区域。 第二薄部分形成在亚光刻尺寸的狭缝中。 根据第一种解决方案，氧化物间隔物部分形成在由模具层限定的光刻开口中。 根据不同的解决方案，牺牲区域形成在模具层的顶部上，并用于在模具层中形成亚光刻缝。