公开(公告)号：US20030214856A1

公开(公告)日：2003-11-20

申请号：US10372639

申请日：2003-02-20

Applicant: STMicroelectronics S. r. I. ,  OVONYX Inc.

Inventor： Fabio Pellizzer ,  Agostino Pirovano

IPC: G11C007/00

CPC classification number: G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691

Abstract: The phase change memory cell is formed by a resistive element and by a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction which is transverse to said first direction. The first and second thin portions are in direct electrical contact and define a contact area having sublithographic extent. The second thin portion is formed in a slit of sublithographic dimensions. According to a first solution, oxide spacer portions are formed in a lithographic opening, delimited by a mold layer. According to a different solution, a sacrificial region is formed on top of a mold layer and is used for forming the sublithographic slit in the mold layer.

Abstract translation: 相变存储单元由电阻元件和相变材料的存储区形成。 电阻元件具有在第一方向上具有第一亚光刻尺寸的第一薄部分; 并且所述存储区具有第二薄部，所述第二薄部在与所述第一方向横切的第二方向上具有第二亚光刻尺寸。 第一和第二薄部分是直接电接触并限定具有亚光刻范围的接触区域。 第二薄部分形成在亚光刻尺寸的狭缝中。 根据第一种解决方案，氧化物间隔物部分形成在由模具层限定的光刻开口中。 根据不同的解决方案，牺牲区域形成在模具层的顶部上，并用于在模具层中形成亚光刻缝。

公开(公告)号：US20040012009A1

公开(公告)日：2004-01-22

申请号：US10371154

申请日：2003-02-20

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Giulio Casagrande ,  Roberto Bez ,  Fabio Pellizzer

IPC: H01L047/00 ,  H01L021/76

CPC classification number: G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691

Abstract: An electronic semiconductor device has a sublithographic contact area between a first conductive region and a second conductive region. The first conductive region is cup-shaped and has vertical walls which extend, in top plan view, along a closed line of elongated shape. One of the walls of the first conductive region forms a first thin portion and has a first dimension in a first direction. The second conductive region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first and the second conductive regions are in direct electrical contact at their thin portions and form the sublithographic contact area. The elongated shape is chosen between rectangular and oval elongated in the first direction. Thereby, the dimensions of the contact area remain approximately constant even in presence of a small misalignment between the masks defining the conductive regions.

Abstract translation: 电子半导体器件具有在第一导电区域和第二导电区域之间的亚光刻接触面积。 第一导电区域是杯状的并且具有垂直壁，其在顶部平面图中沿着细长形状的封闭线延伸。 第一导电区域的一个壁形成第一薄部分并且具有在第一方向上的第一尺寸。 第二导电区域具有第二薄部分，该第二薄部分具有横向于第一尺寸的第二方向的第二亚光刻尺寸。 第一和第二导电区域在其薄部分处直接电接触并形成亚光刻接触区域。 细长形状选择在第一方向上伸长的矩形和椭圆形之间。 因此，即使在限定导电区域的掩模之间存在小的不对准的情况下，接触区域的尺寸也保持近似恒定。

公开(公告)号：US20030231530A1

公开(公告)日：2003-12-18

申请号：US10372761

申请日：2003-02-20

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Roberto Bez ,  Fabio Pellizzer ,  Marina Tosi ,  Romina Zonca

IPC: G11C029/00

CPC classification number: H01L45/06 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2445 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691

Abstract: The phase change memory cell is formed by a resistive element and by a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first thin portion and the second thin portion are in direct electrical contact and define a contact area of sublithographic extension. The second thin portion is delimited laterally by oxide spacer portions surrounded by a mold layer which defines a lithographic opening. The spacer portions are formed after forming the lithographic opening, by a spacer formation technique.

Abstract translation: 相变存储单元由电阻元件和相变材料的存储区形成。 电阻元件具有在第一方向上具有第一亚光刻尺寸的第一薄部分; 并且所述存储区域具有第二薄部分，所述第二薄部分具有横向于所述第一尺寸的第二方向的第二亚光刻尺寸。 第一薄部分和第二薄部分直接电接触并限定亚光刻延伸部分的接触面积。 第二薄部分被由限定光刻开口的模具层围绕的氧化物间隔部分侧向限定。 通过间隔物形成技术在形成光刻开口之后形成间隔部分。

公开(公告)号：US20030219924A1

公开(公告)日：2003-11-27

申请号：US10313991

申请日：2002-12-05

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Roberto Bez ,  Fabio Pellizzer ,  Caterina Riva ,  Romina Zonca

IPC: H01L021/06 ,  H01L021/4763

CPC classification number: G11C13/0004 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691 ,  Y10S438/947

Abstract: A contact structure, including a first conducting region having a first thin portion with a first sublithographic dimension in a first direction; a second conducting region having a second thin portion with a second sublithographic dimension in a second direction transverse to said first direction; the first and second thin portions being in direct electrical contact and defining a contact area having a sublithographic extension. The thin portions are obtained using deposition instead of lithography: the first thin portion is deposed on a wall of an opening in a first dielectric layer; the second thin portion is obtained by deposing a sacrificial region on vertical wall of a first delimitation layer, deposing a second delimitation layer on the free side of the sacrificial region, removing the sacrificial region to form a sublithographic opening that is used to etch a mold opening in a mold layer and filling the mold opening.

Abstract translation: 一种接触结构，包括：第一导电区域，具有在第一方向上具有第一亚光刻尺寸的第一薄部分; 第二导电区域，具有第二薄部分，具有横向于所述第一方向的第二方向的第二亚光刻尺寸; 第一和第二薄部分直接电接触并且限定具有亚光刻延伸部的接触区域。 使用沉积代替光刻获得薄部分：第一薄部分被放置在第一介电层中的开口的壁上; 通过在第一限定层的垂直壁上去除牺牲区域，在牺牲区域的自由侧上取代第二限定层，去除牺牲区域以形成用于蚀刻模具的亚光刻开口来获得第二薄部分 在模具层中开口并填充模具开口。

公开(公告)号：US20040150093A1

公开(公告)日：2004-08-05

申请号：US10680727

申请日：2003-10-07

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Fabio Pellizzer ,  Giulio Casagrande ,  Roberto Bez

IPC: H01L023/48

CPC classification number: H01L27/2445 ,  H01L27/101 ,  H01L27/2463 ,  H01L29/685 ,  H01L45/06 ,  H01L45/1233

Abstract: A cell array is formed by a plurality of cells each including a selection bipolar transistor and a storage component. The cell array is formed in a body including a common collector region of P type; a plurality of base regions of N type, overlying the common collector region; a plurality of emitter regions of P type formed in the base regions; and a plurality of base contact regions of N type and a higher doping level than the base regions, formed in the base regions, wherein each base region is shared by at least two adjacent bipolar transistors.

Abstract translation: 单元阵列由多个单元形成，每个单元包括选择双极晶体管和存储组件。 电池阵列形成在包括P型共用集电极区域的主体中; 多个N型基极区，覆盖在公共集电极区域上; 在基区中形成多个P型发射极区; 以及形成在所述基极区域中的多个N型基极接触区域和比所述基极区域更高的掺杂水平的基极接触区域，其中每个基极区域由至少两个相邻的双极晶体管共享。

公开(公告)号：US20040214415A1

公开(公告)日：2004-10-28

申请号：US10758289

申请日：2004-01-15

Applicant: STMicroelectronics S.r.I. ,  OVONYX Inc.

Inventor： Fabio Pellizzer ,  Roberto Bez ,  Marina Tosi

IPC: H01L021/28

CPC classification number: H01L21/823835 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: A process wherein an insulating region is formed in a body at least around an array portion of a semiconductor body; a gate electrode of semiconductor material is formed on top of a circuitry portion of the semiconductor body; a first silicide protection mask is formed on top of the array portion; the gate electrode and the active areas of the circuitry portion are silicided and the first silicide protection mask is removed. The first silicide protection mask (is of polysilicon and is formed simultaneously with the gate electrode. A second silicide protection mask of dielectric material covering the first silicide protection mask is formed before silicidation of the gate electrode. The second silicide protection mask is formed simultaneously with spacers formed laterally to the gate electrode.

Abstract translation: 一种绝缘区域至少在半导体本体的阵列部分周围形成在主体中的工艺; 半导体材料的栅电极形成在半导体本体的电路部分的顶部; 在阵列部分的顶部形成第一硅化物保护掩模; 栅电极和电路部分的有源区被硅化，并且去除第一硅化物保护掩模。 第一硅化物保护掩模（多晶硅，并与栅电极同时形成）在栅极电极硅化之前形成覆盖第一硅化物保护掩模的第二硅化物保护掩模，第二硅化物保护掩膜与 间隔件横向形成到栅电极。

公开(公告)号：US20040211953A1

公开(公告)日：2004-10-28

申请号：US10756195

申请日：2004-01-13

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Osama Khouri ,  Giorgio Pollaccia ,  Fabio Pellizzer

IPC: H01L047/00 ,  H01L021/336 ,  H01L021/4763

CPC classification number: H01L45/06 ,  H01L27/2445 ,  H01L45/122 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16

Abstract: A contact structure for a PCM device is formed by an elongated formation having a longitudinal extension parallel to the upper surface of the body and an end face extending in a vertical plane. The end face is in contact with a bottom portion of an active region of chalcogenic material so that the dimensions of the contact area defined by the end face are determined by the thickness of the elongated formation and by the width thereof.

Abstract translation: 用于PCM装置的接触结构通过具有平行于主体的上表面的纵向延伸的细长结构和在垂直平面中延伸的端面形成。 端面与​​硫属活性材料的活性区域的底部接触，使得由端面限定的接触面积的尺寸由细长结构体的厚度及其宽度确定。

公开(公告)号：US20040130000A1

公开(公告)日：2004-07-08

申请号：US10680721

申请日：2003-10-07

Applicant: STMicroelectronics S.r.l. ,  Ovonyx Inc.

Inventor： Fabio Pellizzer ,  Giulio Casagrande ,  Roberto Gastaldi ,  Loris Vendrame ,  Augusto Benvenuti ,  Tyler Lowrey

IPC: H01L027/082

CPC classification number: H01L29/685 ,  H01L27/101 ,  H01L27/24

Abstract: A process for manufacturing an array of cells, including: implanting, in a body of semiconductor material of a first conductivity type, a common conduction region of the first conductivity type; forming, in the body, above the common conduction region, a plurality of active area regions of a second conductivity type and a first doping level; forming, on top of the body, an insulating layer having first and second openings; implanting first portions of the active area regions through the first openings with a doping agent of the first conductivity type, thereby forming, in the active area regions, second conduction regions of the first conductivity type; implanting second portions of the active area regions through the second openings with a doping agent of the second conductivity type, thereby forming control contact regions of the second conductivity type and a second doping level, higher than the first doping level; forming, on top of the body, a plurality of storage components, each storage component having a terminal connected to a respective second conduction region.

Abstract translation: 一种用于制造单元阵列的方法，包括：在第一导电类型的半导体材料的主体中注入第一导电类型的共同导电区域; 在体内在公共导电区域上形成第二导电类型和第一掺杂水平的多个有源区域区域; 在所述主体的顶部上形成具有第一和第二开口的绝缘层; 通过第一导电类型的掺杂剂将有源区域的第一部分注入第一开口，从而在有源区域中形成第一导电类型的第二导电区域; 通过第二导电类型的掺杂剂将有源区域的第二部分注入第二开口，由此形成高于第一掺杂级的第二导电类型和第二掺杂级的控制接触区; 在主体的顶部上形成多个存储部件，每个存储部件具有连接到相应的第二传导区域的端子。

公开(公告)号：US20030185047A1

公开(公告)日：2003-10-02

申请号：US10319439

申请日：2002-12-12

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Osama Khouri ,  Ferdinando Bedeschi ,  Giorgio Bosisio ,  Fabio Pellizzer

IPC: G11C011/00

CPC classification number: G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: The phase-change nonvolatile memory array is formed by a plurality of memory cells extending in a first and in a second direction orthogonal to each other. A plurality of column-selection lines extend parallel to the first direction. A plurality of word-selection lines extend parallel to the second direction. Each memory cell includes a PCM storage element and a selection transistor. A first terminal of the selection transistor is connected to a first terminal of the PCM storage element, and the control terminal of the selection transistor is connected to a respective word-selection line. A second terminal of the PCM storage element is connected to a respective column-selection line, and a second terminal of the selection transistor is connected to a reference-potential region while reading and programming the memory cells.

Abstract translation: 相变非易失性存储器阵列由在彼此正交的第一和第二方向上延伸的多个存储单元形成。 多个列选择线平行于第一方向延伸。 多个字选择线平行于第二方向延伸。 每个存储单元包括PCM存储元件和选择晶体管。 选择晶体管的第一端子连接到PCM存储元件的第一端子，并且选择晶体管的控制端子连接到相应的字选择线。 PCM存储元件的第二端子连接到相应的列选择线，并且在读取和编程存储器单元的同时，选择晶体管的第二端子连接到参考电位区域。