公开(公告)号：US20040262690A1

公开(公告)日：2004-12-30

申请号：US10817147

申请日：2004-04-02

Applicant: STMicroelectronics S.A.

Inventor： Philippe Coronel ,  Yves Morand ,  Thomas Skotnicki ,  Robin Cerutti

IPC: H01L027/148 ,  H01L029/768 ,  H01L029/76 ,  H01L021/336

CPC classification number: H01L29/78696 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/78645 ,  H01L29/78648

Abstract: A MOS transistor formed in a silicon substrate comprising an active area surrounded with an insulating wall, a first conductive strip covering a central strip of the active area, one or several second conductive strips placed in the active area right above the first strip, and conductive regions placed in two recesses of the insulating wall and placed against the ends of the first and second strips, the silicon surfaces opposite to the conductive strips and regions being covered with an insulator forming a gate oxide.

Abstract translation: 一种形成在硅衬底中的MOS晶体管，包括被绝缘壁包围的有源区域，覆盖有源区域的中心条带的第一导电条，放置在位于第一条带正上方的有源区域中的一个或多个第二导电条，以及导电 放置在绝缘壁的两个凹部中并且抵靠第一和第二条带的端部放置的区域，与导电条带和区域相对的硅表面被形成栅极氧化物的绝缘体覆盖。