公开(公告)号：US20040262690A1

公开(公告)日：2004-12-30

申请号：US10817147

申请日：2004-04-02

Applicant: STMicroelectronics S.A.

Inventor： Philippe Coronel ,  Yves Morand ,  Thomas Skotnicki ,  Robin Cerutti

IPC: H01L027/148 ,  H01L029/768 ,  H01L029/76 ,  H01L021/336

CPC classification number: H01L29/78696 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/78645 ,  H01L29/78648

Abstract: A MOS transistor formed in a silicon substrate comprising an active area surrounded with an insulating wall, a first conductive strip covering a central strip of the active area, one or several second conductive strips placed in the active area right above the first strip, and conductive regions placed in two recesses of the insulating wall and placed against the ends of the first and second strips, the silicon surfaces opposite to the conductive strips and regions being covered with an insulator forming a gate oxide.

Abstract translation: 一种形成在硅衬底中的MOS晶体管，包括被绝缘壁包围的有源区域，覆盖有源区域的中心条带的第一导电条，放置在位于第一条带正上方的有源区域中的一个或多个第二导电条，以及导电 放置在绝缘壁的两个凹部中并且抵靠第一和第二条带的端部放置的区域，与导电条带和区域相对的硅表面被形成栅极氧化物的绝缘体覆盖。

公开(公告)号：US20020022333A1

公开(公告)日：2002-02-21

申请号：US09932513

申请日：2001-08-17

Applicant: STMicroelectronics S.A.

Inventor： Yves Morand ,  Jean-Luc Pelloie

IPC: H01L021/20 ,  H01L029/00

CPC classification number: H01L28/60 ,  H01L21/76895

Abstract: A production of a capacitor includes the simultaneous production, in at least part of an intertrack insulating layer (3) associated with a given metallization level, on the one hand, of the two electrodes (50, 70) and of the dielectric layer (60) of the capacitor and, on the other hand, of a conducting trench (41) which laterally extends the lower electrode of the capacitor, is electrically isolated from the upper electrode and has a transverse dimension smaller than the transverse dimension of the capacitor, and the production, in the interlevel insulating layer (8) covering the intertrack insulating layer, of two conducting pads (80, 81) which come into contact with the upper electrode of the capacitor and with the conducting trench, respectively.

Abstract translation: 电容器的生产包括在两个电极（50,70）和电介质层（60）中的至少一部分与给定的金属化水平相关联的交织绝缘层（3）的同时产生 ），另一方面，横向延伸电容器的下电极的导电沟槽（41）与上电极电隔离并且具有比电容器的横向尺寸小的横向尺寸，以及 在覆盖交织绝缘层的层间绝缘层（8）中分别与电容器的上电极和导电沟槽接触的两个导电焊盘（80,81）的制造。