公开(公告)号：US20030109183A1

公开(公告)日：2003-06-12

申请号：US10243972

申请日：2002-09-12

Applicant: STMicroelectronics S.r.I. ,  Hewlett-Packard Company

Inventor： Ubaldo Mastromatteo ,  Mauro Bombonati ,  Daniela Morin ,  Marta Mottura ,  Mauro Marchi

IPC: H01R009/22

CPC classification number: B81C1/00269 ,  H01L21/185 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05181 ,  H01L2224/05624 ,  H01L2224/10126 ,  H01L2224/10135 ,  H01L2224/13021 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13124 ,  H01L2224/13164 ,  H01L2224/81136 ,  H01L2224/81139 ,  H01L2224/812 ,  H01L2224/81201 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2924/013

Abstract: A process for bonding two distinct substrates that integrate microsystems, including the steps of forming micro-integrated devices in at least one of two substrates using micro-electronic processing techniques and bonding the substrates. Bonding is performed by forming on a first substrate bonding regions of deformable material and pressing the substrates one against another so as to deform the bonding regions and to cause them to react chemically with the second substrate. The bonding regions are preferably formed by a thick layer of a material chosen from among aluminum, copper and nickel, covered by a thin layer of a material chosen from between palladium and platinum. Spacing regions ensure exact spacing between the two wafers.