IN-MEMORY COMPUTATION DEVICE HAVING AN IMPROVED CURRENT READING CIRCUIT AND CONTROL METHOD

    公开(公告)号:US20240212751A1

    公开(公告)日:2024-06-27

    申请号:US18543847

    申请日:2023-12-18

    Abstract: A word line activation unit of an in-memory computation generates activation signals as a function of an input value. The in-memory computation device includes a memory array with a plurality of memory cells (each storing a computational weight) coupled to a bit line and each to a word line and a digital detector. A cell current flows through each memory cell as a function of the activation signal and the computational weight and a bit line current is generated as a function of a summation of the cell currents. The digital detector performs successive iterations on the bit line current. In each iteration: an integration stage generates an integration signal indicative of a time integral of the bit line current, and resets the integration signal when the integration signal reaches a threshold; and the counter stage updates the output signal in response to the integration signal reaching the threshold.

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