公开(公告)号：US20030161195A1

公开(公告)日：2003-08-28

申请号：US10345129

申请日：2003-01-14

Applicant: STMicroelectronics S.r.l.

Inventor： Romina Zonca ,  Maria Santina Marangon ,  Giorgio De Santi

IPC: G11C007/00

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C2013/008 ,  G11C2213/52 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: A vertical-current-flow resistive element includes a monolithic region having a first portion and a second portion arranged on top of one another and formed from a single material. The first portion has a first resistivity, and the second portion has a second resistivity, lower than the first resistivity. To this aim, a monolithic region with a uniform resistivity and a height greater than at least one of the other dimensions is first formed; then the resistivity of the first portion is increased by introducing, from the top, species that form a prevalently covalent bond with the conductive material of the monolithic region, so that the concentration of said species becomes higher in the first portion than in the second portion. Preferably, the conductive material is a binary or ternary alloy, chosen from among TiAl, TiSi, TiSi2, Ta, WSi, and the increase in resistivity is obtained by nitridation.

Abstract translation: 垂直电流阻力元件包括具有第一部分和第二部分的整体区域，第一部分和第二部分彼此顶部布置并由单一材料形成。 第一部分具有第一电阻率，第二部分具有低于第一电阻率的第二电阻率。 为此目的，首先形成具有均匀的电阻率和高于其它尺寸中的至少一个的高度的整体区域; 那么通过从顶部引入与整体区域的导电材料形成普遍共价键的物质来增加第一部分的电阻率，使得所述物质的浓度在第一部分中比在第二部分中更高 。 优选地，导电材料是选自TiAl，TiSi，TiSi 2，Ta，WSi的二元或三元合金，并且通过氮化获得电阻率的增加。