公开(公告)号：US20240162371A1

公开(公告)日：2024-05-16

申请号：US18504034

申请日：2023-11-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Giuseppe D'ARRIGO ,  Antonella SCIUTO ,  Domenico Pierpaolo MELLO ,  Pietro Paolo BARBARINO ,  Salvatore COFFA

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/34

CPC classification number: H01L33/025 ,  H01L33/0054 ,  H01L33/20 ,  H01L33/34

Abstract: A light-emitter device comprising: a body of solid-state material; and a P-N junction in the body, including: a cathode region, having N-type conductivity; an anode region, having P-type conductivity, extending in direct contact with the cathode region and defining a light-emitting surface; and a depletion region around an interface between the anode and the cathode regions. The light-emitting surface has at least one indentation that extends towards the depletion region. The depletion region has a peak defectiveness area, housing irregularities in crystal lattice, in correspondence of said at least one indentation. The defectiveness area, which includes point defects, line defects, bulk defects, etc., is generated as a direct consequence of the formation of the indentation by an indenter or nanoindenter system. In the defectiveness area color centers are generated.

公开(公告)号：US20200028001A1

公开(公告)日：2020-01-23

申请号：US16509040

申请日：2019-07-11

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo MAZZILLO ,  Pietro Paolo BARBARINO ,  Domenico Pierpaolo MELLO ,  Antonella SCIUTO

IPC: H01L31/0216 ,  H01L31/107 ,  H01L31/16 ,  H01L33/38

Abstract: An optical sensor includes a light-emitter device formed in a body of solid-state material with wide band gap having a surface. The light-emitter device includes a cathode region having a first conductivity type and an anode region having a second conductivity type. The anode region extends into the cathode region from the surface of the body. The anode region and the cathode region define a junction, and the cathode region has, near the junction, a peak defectiveness area accommodating vacancies in the crystalline structure due to non-bound ions or atoms of Group IV or VIII of the periodic table, which may include carbon, silicon, helium, argon, or neon. The vacancies are at a higher concentration with respect to mean values of vacancies in the anode region and in the cathode region. For example, the vacancies in the peak defectiveness area have a concentration of at least 1013 atoms/cm−3.