公开(公告)号：US20220238738A1

公开(公告)日：2022-07-28

申请号：US17719205

申请日：2022-04-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello SANTANGELO ,  Massimo Cataldo MAZZILLO ,  Salvatore CASCINO ,  Giuseppe LONGO ,  Antonella SCIUTO

IPC: H01L31/0352 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/107 ,  H01L31/18 ,  H01L31/0312

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

公开(公告)号：US20170207360A1

公开(公告)日：2017-07-20

申请号：US15479034

申请日：2017-04-04

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Antonella SCIUTO ,  Dario SUTERA

IPC: H01L31/101 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/108 ,  H01L31/0352 ,  H01L31/11 ,  H01L31/028

CPC classification number: H01L31/1013 ,  H01L31/022416 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/108 ,  H01L31/11 ,  H01L31/1812

Abstract: A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.

公开(公告)号：US20220085229A1

公开(公告)日：2022-03-17

申请号：US17534159

申请日：2021-11-23

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo MAZZILLO ,  Valeria CINNERA MARTINO

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

公开(公告)号：US20190305159A1

公开(公告)日：2019-10-03

申请号：US16370636

申请日：2019-03-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello SANTANGELO ,  Massimo Cataldo MAZZILLO ,  Salvatore CASCINO ,  Giuseppe LONGO ,  Antonella SCIUTO

IPC: H01L31/0352 ,  H01L31/028 ,  H01L31/107 ,  H01L31/18 ,  H01L31/0216

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

公开(公告)号：US20190148568A1

公开(公告)日：2019-05-16

申请号：US16228483

申请日：2018-12-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Piero FALLICA ,  Salvatore LOMBARDO

IPC: H01L31/0216 ,  H01L27/146 ,  H01L31/107 ,  H01L27/144 ,  G01J1/44 ,  H01L31/02

CPC classification number: H01L31/02164 ,  G01J1/44 ,  G01J2001/4466 ,  H01L27/1446 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14649 ,  H01L31/02027 ,  H01L31/107

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US20170236851A1

公开(公告)日：2017-08-17

申请号：US15583750

申请日：2017-05-01

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Alfio RUSSO

IPC: H01L27/144 ,  H01L31/18 ,  H01L31/103 ,  H01L31/0312 ,  H01L31/0216

CPC classification number: H01L27/1443 ,  G01M15/108 ,  G01N21/05 ,  G01N21/31 ,  G01N21/314 ,  G01N21/33 ,  G01N21/61 ,  G01N21/85 ,  G01N2021/3137 ,  G01N2021/8578 ,  G01N2201/0612 ,  H01L31/00 ,  H01L31/02162 ,  H01L31/0312 ,  H01L31/1035 ,  H01L31/1037 ,  H01L31/108 ,  H01L31/18 ,  H01L31/1812 ,  Y02E10/50

Abstract: An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.

公开(公告)号：US20240266459A1

公开(公告)日：2024-08-08

申请号：US18608301

申请日：2024-03-18

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Massimo Cataldo MAZZILLO ,  Valeria CINNERA MARTINO

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/1075 ,  H01L27/1443 ,  H01L31/0352 ,  H01L31/18

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

公开(公告)号：US20210399156A1

公开(公告)日：2021-12-23

申请号：US17464299

申请日：2021-09-01

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Giovanni CONDORELLI

IPC: H01L31/107 ,  H01L31/18 ,  G01N21/75 ,  H01L27/146

Abstract: A device for detecting a chemical species, including a Geiger-mode avalanche diode, which includes a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The detection device further includes: a sensitive structure arranged on the anode region and including at least one sensitive region, which has an electrical permittivity that depends upon the concentration of the chemical species; and a resistive region, arranged on the sensitive structure and electrically coupled to the anode region.

公开(公告)号：US20210320219A1

公开(公告)日：2021-10-14

申请号：US17357653

申请日：2021-06-24

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo MAZZILLO ,  Valeria CINNERA MARTINO ,  Antonella SCIUTO

IPC: H01L31/12 ,  H01L31/0376 ,  H01L31/107 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/34

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

公开(公告)号：US20200052010A1

公开(公告)日：2020-02-13

申请号：US16654910

申请日：2019-10-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo MAZZILLO ,  Alfio RUSSO

IPC: H01L27/144 ,  G01N21/85 ,  G01N21/31 ,  G01N21/05 ,  H01L31/18 ,  H01L31/0216 ,  G01N21/61 ,  H01L31/00 ,  H01L31/0312 ,  H01L31/103 ,  H01L31/108

Abstract: An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.