公开(公告)号：US11681141B2

公开(公告)日：2023-06-20

申请号：US16705677

申请日：2019-12-06

Applicant: STMicroelectronics S.r.l.

Inventor： Roberto Carminati ,  Sonia Costantini ,  Riccardo Gianola ,  Linda Montagna ,  Francesca Maria Carla Carpignano

IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00 ,  G02B26/10

CPC classification number: G02B26/085 ,  B81B3/0045 ,  B81C1/00166 ,  G02B26/101 ,  B81B2201/042 ,  B81B2203/0127 ,  B81B2203/0154 ,  B81B2203/0163 ,  B81B2203/04 ,  B81C2201/016 ,  B81C2201/0188

Abstract: A MEMS device is obtained by forming a temporary biasing structure on a semiconductor body, and forming an actuation coil on the semiconductor body, the actuation coil having at least one first end turn, one second end turn and an intermediate turn arranged between the first and the second end turns and electrically coupled to the first end turn through the temporary biasing structure. In this way, the intermediate turn is biased at approximately the same potential as the first end turn during galvanic growth, and, at the end of growth, the actuation coil has an approximately uniform thickness. At the end of galvanic growth, portions of the temporary biasing structure are selectively removed to electrically separate the first end turn from the intermediate turn and from a dummy biasing region adjacent to the first end turn.