公开(公告)号：US12113140B2

公开(公告)日：2024-10-08

申请号：US17668739

申请日：2022-02-10

Applicant: STMicroelectronics S.r.l.

Inventor： Luca Seghizzi ,  Linda Montagna ,  Giuseppe Visalli ,  Mikel Azpeitia Urquia

IPC: H01L31/0232 ,  G02B26/08 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/113 ,  H02N1/00

CPC classification number: H01L31/02325 ,  G02B26/0841 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/1136 ,  H02N1/004

Abstract: Disclosed herein is an integrated component formed by a first wafer having first and second trenches defined in a top surface thereof, and a second wafer coupled to the first wafer and formed by a substrate with a structural layer thereon that integrated an electromagnetic radiation detector overlying the second trench. A first cap is coupled to the second wafer, overlies the electromagnetic radiation detector, and serves to define a first air-tight chamber in which the electromagnetic radiation detector is positioned. A stator, a rotor, and a mobile mass are integrated within the substrate and form a drive assembly for driving the mobile mass. The rotor overlies the first trench. A second cap is coupled to the second wafer, overlies the mobile mass, and serving to define a second air-tight chamber in which the mobile mass is positioned.

公开(公告)号：US11681141B2

公开(公告)日：2023-06-20

申请号：US16705677

申请日：2019-12-06

Applicant: STMicroelectronics S.r.l.

Inventor： Roberto Carminati ,  Sonia Costantini ,  Riccardo Gianola ,  Linda Montagna ,  Francesca Maria Carla Carpignano

IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00 ,  G02B26/10

CPC classification number: G02B26/085 ,  B81B3/0045 ,  B81C1/00166 ,  G02B26/101 ,  B81B2201/042 ,  B81B2203/0127 ,  B81B2203/0154 ,  B81B2203/0163 ,  B81B2203/04 ,  B81C2201/016 ,  B81C2201/0188

Abstract: A MEMS device is obtained by forming a temporary biasing structure on a semiconductor body, and forming an actuation coil on the semiconductor body, the actuation coil having at least one first end turn, one second end turn and an intermediate turn arranged between the first and the second end turns and electrically coupled to the first end turn through the temporary biasing structure. In this way, the intermediate turn is biased at approximately the same potential as the first end turn during galvanic growth, and, at the end of growth, the actuation coil has an approximately uniform thickness. At the end of galvanic growth, portions of the temporary biasing structure are selectively removed to electrically separate the first end turn from the intermediate turn and from a dummy biasing region adjacent to the first end turn.

公开(公告)号：US11276789B2

公开(公告)日：2022-03-15

申请号：US16744865

申请日：2020-01-16

Applicant: STMicroelectronics S.r.l.

Inventor： Luca Seghizzi ,  Linda Montagna ,  Giuseppe Visalli ,  Mikel Azpeitia Urquia

IPC: H01L31/0232 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/113 ,  H02N1/00 ,  G02B26/08

Abstract: A first wafer of semiconductor material has a surface. A second wafer of semiconductor material includes a substrate and a structural layer on the substrate. The structural layer integrates a detector device for detecting electromagnetic radiation. The structural layer of the second wafer is coupled to the surface of the first wafer. The substrate of the second wafer is shaped to form a stator, a rotor, and a mobile mass of a micromirror. The stator and the rotor form an assembly for capacitively driving the mobile mass.