公开(公告)号：US20230290620A1

公开(公告)日：2023-09-14

申请号：US17999830

申请日：2021-05-27

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Masaki HIRAYAMA ,  Tetsuro ITAGAKI

IPC: H01J37/32

CPC classification number: H01J37/32697 ,  H01J37/32715 ,  H01J37/32642 ,  H01J37/32174

Abstract: Provided is an electrostatic chuck device including: an electrostatic chuck plate which has a dielectric substrate having a placement surface on which a wafer is placed and electrodes positioned in the dielectric substrate; a focus ring which is installed on an outer peripheral portion of the electrostatic chuck plate and surrounding the placement surface; and a power connection portion which connects the electrode and a power supply. The electrostatic chuck plate has a first electrode positioned in a region overlapping the placement surface in plan view and a second electrode positioned in a region overlapping the focus ring in plan view. The power connection portion includes a power wire electrically connecting the first electrode and the second electrode via a current regulator.

公开(公告)号：US20230223244A1

公开(公告)日：2023-07-13

申请号：US17999833

申请日：2021-05-27

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Masaki HIRAYAMA ,  Tetsuro ITAGAKI

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01J37/32568 ,  H01J37/32082 ,  H01J37/32577 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J37/32541

Abstract: A wafer support device includes a dielectric substrate and an RF electrode provided in the dielectric substrate. The RF electrode is divided into a plurality of zone electrodes arranged in a planar direction of the dielectric substrate. The wafer support device has: a short-circuit member interconnecting the plurality of zone electrodes; and a main power supply rod connected to the short-circuit member from a back side of the dielectric substrate.

公开(公告)号：US20230215704A1

公开(公告)日：2023-07-06

申请号：US17999823

申请日：2021-05-27

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Masaki HIRAYAMA ,  Tetsuro ITAGAKI

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32541 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J37/32577

Abstract: An electrostatic chuck device includes: an electrostatic chuck plate having a dielectric substrate having a placement surface on which a wafer is placed and an adsorption electrode positioned in the dielectric substrate; a metal base supporting the electrostatic chuck plate from a back surface side opposite to the placement surface; and a focus ring installed on an outer peripheral portion of the electrostatic chuck plate and surrounding the placement surface. The electrostatic chuck plate has a ring adsorption region which is adsorbed to the focus ring and is located on a surface positioned on the same side as the placement surface and has a base adsorption region which is adsorbed to the metal base and located on a back surface opposite to the placement surface.

公开(公告)号：US20240429032A1

公开(公告)日：2024-12-26

申请号：US18827152

申请日：2024-09-06

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Masaki HIRAYAMA ,  Tetsuro ITAGAKI

IPC: H01J37/32 ,  H01L21/683

Abstract: A wafer support device includes a dielectric substrate and an RF electrode provided in the dielectric substrate. The RF electrode is divided into a plurality of zone electrodes arranged in a planar direction of the dielectric substrate. The wafer support device has: a short-circuit member interconnecting the plurality of zone electrodes; and a main power supply rod connected to the short-circuit member from a back side of the dielectric substrate.