公开(公告)号：US20180289600A1

公开(公告)日：2018-10-11

申请号：US15525536

申请日：2015-11-11

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Syunsuke SUMA ,  Tetsuro ITAGAKI ,  Hirokazu MATSUSHITA

IPC: A61K8/25 ,  A61K8/02 ,  A61K8/27 ,  A61Q1/02 ,  A61Q1/04 ,  A61Q1/08 ,  A61Q1/10 ,  A61Q17/04 ,  A61Q19/00 ,  C09C1/04

Abstract: The present invention provides silicon oxide-coated zinc oxide in which, in a silica coating formed of a silicate alkali metal salt, the elution of zinc ions is suppressed, a method for preparing the same, a composition containing silicon oxide-coated zinc oxide, and a cosmetic material. The silicon oxide-coated zinc oxide of the present invention is silicon oxide-coated zinc oxide formed by coating surfaces of zinc oxide particles with a silicon oxide coating, in which an average primary particle diameter of the zinc oxide particles is more than 50 nm and 500 nm or less, and when held in a buffer solution having a pH of 5 for 1 hour, an elution ratio S of the zinc oxide defined by following Expression (1) is 50% or less. Elution ratio S=(amount of eluted zinc oxide)/(amount of zinc oxide in silicon oxide-coated zinc oxide)   (1)

公开(公告)号：US20170095407A1

公开(公告)日：2017-04-06

申请号：US15126140

申请日：2015-03-30

Applicant: Sumitomo Osaka Cement Co., Ltd

Inventor： Tetsuro ITAGAKI ,  Gaku FUJIHASHI ,  Syunsuke SUMA

IPC: A61K8/27 ,  C09C1/04 ,  A61Q17/04 ,  A61K8/02 ,  A61K8/25

CPC classification number: A61K8/27 ,  A61K8/0241 ,  A61K8/25 ,  A61K2800/412 ,  A61K2800/413 ,  A61K2800/621 ,  A61Q17/04 ,  C01P2002/82 ,  C01P2002/86 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/84 ,  C01P2006/22 ,  C09C1/043

Abstract: Provided are a silicon oxide-coated zinc oxide, a method for producing the same, a composition and a cosmetic including a silicon oxide-coated zinc oxide. The silicon oxide-coated zinc oxide is a silicon oxide-coated zinc oxide formed by coating surfaces of zinc oxide particles with a silicon oxide coat, in which an average particle diameter of the zinc oxide particles is in a range of more than 50 nm and 500 nm or less, and, when an abundance ratio of silicon in the silicon oxide coat in a Q3 environment is indicated by Q3, and an abundance ratio in a Q4 environment is indicated by Q4, Q3+Q4≧0.6 and Q4/(Q3+Q4)≧0.5 are satisfied.

公开(公告)号：US20240429032A1

公开(公告)日：2024-12-26

申请号：US18827152

申请日：2024-09-06

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Masaki HIRAYAMA ,  Tetsuro ITAGAKI

IPC: H01J37/32 ,  H01L21/683

Abstract: A wafer support device includes a dielectric substrate and an RF electrode provided in the dielectric substrate. The RF electrode is divided into a plurality of zone electrodes arranged in a planar direction of the dielectric substrate. The wafer support device has: a short-circuit member interconnecting the plurality of zone electrodes; and a main power supply rod connected to the short-circuit member from a back side of the dielectric substrate.

公开(公告)号：US20200325034A1

公开(公告)日：2020-10-15

申请号：US16957376

申请日：2018-12-27

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Teppei YAKUBO ,  Tsutomu NOZOE ,  Tetsuro ITAGAKI

IPC: C01G23/047 ,  A61K8/29 ,  A61K8/04

Abstract: A titanium oxide powder of the present invention has a BET specific surface area of 5 m2/g or more and 15 m2/g or less and contains polyhedral-shaped titanium oxide particles having eight or more faces, in which a mass reduction rate in a case of being heated at 800° C. for 1 hour in an air atmosphere is 0.03% by mass or more and 0.5% by mass or less.

公开(公告)号：US20250014933A1

公开(公告)日：2025-01-09

申请号：US18710508

申请日：2022-11-07

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Keisuke MAEDA ,  Norito MORISHITA ,  Tetsuro ITAGAKI ,  Yoshiki YOSHIOKA

IPC: H01L21/683 ,  H01J37/32

Abstract: Provided is an electrostatic chuck device including: an electrostatic chuck plate including a dielectric substrate that includes a placement surface on which a sample is mounted and an adsorption electrode that is positioned inside the dielectric substrate; and a base that supports the electrostatic chuck plate from a side opposite to the placement surface, in which in the electrostatic chuck plate, a first through-hole through which gas is supplied to the placement surface is provided, a porous body that allows passage of the gas is inserted into the first through-hole, a first adhesive layer that bonds an inner peripheral surface of the first through-hole and an outer peripheral surface of the porous body to each other is provided between the inner peripheral surface and the outer peripheral surface, and a thickness dimension of the first adhesive layer is 0 mm or more and 0.15 mm or less, at least in a region of 0.1 mm from the placement surface.

公开(公告)号：US20230223244A1

公开(公告)日：2023-07-13

申请号：US17999833

申请日：2021-05-27

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Masaki HIRAYAMA ,  Tetsuro ITAGAKI

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01J37/32568 ,  H01J37/32082 ,  H01J37/32577 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J37/32541

Abstract: A wafer support device includes a dielectric substrate and an RF electrode provided in the dielectric substrate. The RF electrode is divided into a plurality of zone electrodes arranged in a planar direction of the dielectric substrate. The wafer support device has: a short-circuit member interconnecting the plurality of zone electrodes; and a main power supply rod connected to the short-circuit member from a back side of the dielectric substrate.

公开(公告)号：US20230215704A1

公开(公告)日：2023-07-06

申请号：US17999823

申请日：2021-05-27

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Masaki HIRAYAMA ,  Tetsuro ITAGAKI

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32541 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J37/32577

Abstract: An electrostatic chuck device includes: an electrostatic chuck plate having a dielectric substrate having a placement surface on which a wafer is placed and an adsorption electrode positioned in the dielectric substrate; a metal base supporting the electrostatic chuck plate from a back surface side opposite to the placement surface; and a focus ring installed on an outer peripheral portion of the electrostatic chuck plate and surrounding the placement surface. The electrostatic chuck plate has a ring adsorption region which is adsorbed to the focus ring and is located on a surface positioned on the same side as the placement surface and has a base adsorption region which is adsorbed to the metal base and located on a back surface opposite to the placement surface.

公开(公告)号：US20190161360A1

公开(公告)日：2019-05-30

申请号：US16313426

申请日：2017-06-28

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Teppei YAKUBO ,  Tetsuro ITAGAKI

IPC: C01G23/053 ,  A61K8/29 ,  A61K8/04 ,  A61Q1/12

Abstract: Titanium oxide particles of the present invention include octahedral-shaped particles, in which each particle of the octahedral-shaped particles has line segments each of which connects two apexes which face each other and has a maximum value of the line segments, an average value of the maximum values is 300 nm or more and 1,000 nm or less, and a value (the average value of the maximum values/BET-converted average particle diameter) obtained by dividing the average value of the maximum values of the line segments by an average particle diameter converted from a BET specific surface area is 1.0 or more and 2.5 or less.

公开(公告)号：US20180161255A1

公开(公告)日：2018-06-14

申请号：US15553146

申请日：2016-02-24

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Syunsuke SUMA ,  Tetsuro ITAGAKI ,  Gaku FUJIHASHI ,  Hirokazu MATSUSHITA

IPC: A61K8/27 ,  A61K8/25 ,  A61Q17/04

CPC classification number: A61K8/27 ,  A61K8/25 ,  A61K8/8147 ,  A61K2800/62 ,  A61Q17/04 ,  C01P2002/52 ,  C01P2004/03 ,  C01P2004/60 ,  C01P2004/84 ,  C09C1/043

Abstract: Provided is silicon oxide-coated zinc oxide, which can inhibit a decrease in viscosity resulting from a carbomer in a case where the silicon oxide-coated zinc oxide is used in water-based materials, a composition containing silicon oxide-coated zinc oxide, and a cosmetic product. The silicon oxide-coated zinc oxide of the present invention contains zinc oxide particles and a silicon oxide coating on a surface of the zinc oxide particles, in which an electric conductivity of a water suspension of the silicon oxide-coated zinc oxide is 120 μS/cm or less.

公开(公告)号：US20160287488A1

公开(公告)日：2016-10-06

申请号：US15035620

申请日：2014-11-13

Applicant: SUMITOMO OSAKA CEMENT CO., LTD.

Inventor： Tetsuro ITAGAKI ,  Syunsuke SUMA ,  Gaku FUJIHASHI

IPC: A61K8/02 ,  A61K8/25 ,  A61Q17/04 ,  A61Q1/08 ,  A61Q19/00 ,  A61Q1/12 ,  A61Q1/06 ,  A61Q1/10 ,  A61K8/27 ,  C09C1/04

CPC classification number: A61K8/0241 ,  A61K8/25 ,  A61K8/27 ,  A61K2800/412 ,  A61K2800/413 ,  A61K2800/621 ,  A61Q1/06 ,  A61Q1/08 ,  A61Q1/10 ,  A61Q1/12 ,  A61Q17/04 ,  A61Q19/007 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/84 ,  C09C1/043

Abstract: Zinc oxide coated with silicon oxide of the present invention is zinc oxide which is coated with silicon oxide wherein surfaces of zinc oxide particles are coated with silicon oxide coatings, and the coated zinc oxide particles comprises at least one element selected from a group consisting of Mg, Ca, and Ba.

Abstract translation: 用本发明的氧化硅涂覆的氧化锌是用氧化硅涂覆的氧化锌，其中氧化锌颗粒的表面涂覆有氧化硅涂层，涂覆的氧化锌颗粒包含至少一种选自Mg ，Ca和Ba。