公开(公告)号：US6079356A

公开(公告)日：2000-06-27

申请号：US023866

申请日：1998-02-13

申请人： Salvador Umotoy ,  Anh N. Nguyen ,  Truc T. Tran ,  Lawrence Chung-Lei ,  Mei Chang

发明人： Salvador Umotoy ,  Anh N. Nguyen ,  Truc T. Tran ,  Lawrence Chung-Lei ,  Mei Chang

IPC分类号： H05H1/46 ,  C23C16/08 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/455 ,  H01J37/3244 ,  H01J37/32449

摘要： A plasma reaction chamber particularly suited for plasma-enhance chemical vapor deposition of titanium using TiCl.sub.4 as the precursor. The reactor includes a perforated showerhead faceplate and a perforated blocker plate within the showerhead to evenly distribute the atomized TiCl.sub.4. Both the showerhead faceplate and the blocker plate are made of solid nickel. RF power is applied between the showerhead faceplate and the heater pedestal supporting the wafer to excite the processing gas into a plasma. A shield ring is set on the periphery of the heater pedestal to confine the plasma to the processing region above the wafer. The shield ring is supported on the heater pedestal by a downwardly descending ridge, thereby minimizing thermal flow. The shield ring also protects the periphery of the top surface of the heater pedestal not covered by the wafer. An isolator electrically insulates the RF-driven showerhead from the chamber body and is disposed generally above the shield ring. The bottom of the isolator and the top of the shield ring are similarly curved with a nearly constant gap between them. The small gap creates a flow choke between the processing region and an annular pumping channel. The curve of the gap prevents the plasma from extending into the pumping channel. The bottom of the chamber below the heater pedestal is covered with a quartz thermal shield insert to reduce the flow of heat to the chamber wall. A lift ring for raising lift pins selectively lifting the wafer is also composed of quartz.

摘要翻译： 一种等离子体反应室，特别适用于使用TiCl4作为前体的等离子体增强钛的化学气相沉积。 反应器包括穿孔淋浴头面板和淋浴器内的穿孔阻塞板，以均匀分布雾化的TiCl4。 喷头面板和阻挡板均由固体镍制成。 在喷头面板和支撑晶片的加热器基座之间施加RF功率以将处理气体激发成等离子体。 屏蔽环设置在加热器基座的周边上，以将等离子体限制在晶片上方的处理区域。 屏蔽环通过向下的下降脊支撑在加热器底座上，从而最小化热流。 屏蔽环还保护未被晶片覆盖的加热器基座的顶表面的周边。 隔离器将RF驱动的喷头与室主体电绝缘并且大致设置在屏蔽环的上方。 隔离器的底部和屏蔽环的顶部类似地弯曲，它们之间具有几乎恒定的间隙。 小间隙在处理区域和环形泵送通道之间产生流动扼流圈。 间隙的曲线阻止等离子体延伸到泵送通道中。 在加热器底座下面的腔室的底部覆盖有石英热屏蔽插入件，以减少到室壁的热量流动。 用于升高提升针的提升环选择性地提升晶片也由石英组成。