公开(公告)号：US10761390B2

公开(公告)日：2020-09-01

申请号：US16021119

申请日：2018-06-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Youngjae Jeon ,  Hyunseong Kang ,  Youhan Moon ,  Beomsoo Park ,  Jaehyun Park ,  Il You ,  Sangju Lee ,  Jaeho Choi

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L29/423 ,  H01L27/12 ,  G02F1/1333 ,  G02F1/1343

Abstract: An LCD device includes first and second substrates and a liquid crystal layer disposed between the substrates. A gate transmitting member is disposed on the first substrate. The gate transmitting member includes a gate line and a gate electrode. A data transmitting member is disposed on the first substrate. The data transmitting member includes a data line, a source electrode, and a drain electrode. A pixel electrode is disposed in a pixel area. The pixel electrode is connected to the source electrode. A first gate insulating layer is disposed on the gate transmitting member. The first gate insulating layer has substantially a same shape as the gate transmitting member and has a greater size than a size of the gate transmitting member. A semiconductor layer is disposed on the first gate insulating layer. The semiconductor layer overlaps the gate electrode, the source electrode, and the drain electrode.

公开(公告)号：US12219802B2

公开(公告)日：2025-02-04

申请号：US17410455

申请日：2021-08-24

Applicant: Samsung Display Co., LTD.

Inventor： Tae Jin Kong ,  Jin Yeong Kim ,  Jun Seok Min ,  Il You ,  Hae Ju Yun ,  Seon Beom Ji

IPC: H10K50/856 ,  G09F9/30 ,  H10K50/86 ,  H10K102/00

Abstract: A display device comprises a display panel, a panel support member disposed on a surface of the display panel and including segments that are spaced apart from each other, and a reflective layer disposed between the segments.

公开(公告)号：US10042225B2

公开(公告)日：2018-08-07

申请号：US15149255

申请日：2016-05-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Youngjae Jeon ,  Hyunseong Kang ,  Youhan Moon ,  Beomsoo Park ,  Jaehyun Park ,  Il You ,  Sangju Lee ,  Jaeho Choi

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L29/423 ,  H01L27/12 ,  G02F1/1333 ,  G02F1/1343

Abstract: An LCD device includes first and second substrates and a liquid crystal layer disposed between the substrates. A gate transmitting member is disposed on the first substrate. The gate transmitting member includes a gate line and a gate electrode. A data transmitting member is disposed on the first substrate. The data transmitting member includes a data line, a source electrode, and a drain electrode. A pixel electrode is disposed in a pixel area. The pixel electrode is connected to the source electrode. A first gate insulating layer is disposed on the gate transmitting member. The first gate insulating layer has substantially a same shape as the gate transmitting member and has a greater size than a size of the gate transmitting member. A semiconductor layer is disposed on the first gate insulating layer. The semiconductor layer overlaps the gate electrode, the source electrode, and the drain electrode.

公开(公告)号：US09989827B2

公开(公告)日：2018-06-05

申请号：US15412930

申请日：2017-01-23

Applicant: Samsung Display Co., Ltd

Inventor： Young Jae Jeon ,  Il You ,  Seung Rae Kim ,  Chun Yan Jin ,  Beom Soo Park ,  Jae Hyun Park ,  Sang Ju Lee ,  Hye Won Hyeon

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC classification number: G02F1/1368 ,  G02F1/134309 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/134318 ,  G02F2001/136295 ,  H01L27/1248 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/42384 ,  H01L29/78636 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A display device is provided. The display device includes a base; a gate conductor disposed directly on the base and including a gate line and a gate electrode; a gate insulating layer disposed on the gate conductor and including an overlap portion, which overlaps with the gate conductor, and a non-overlap portion, which is connected to the overlap portion, does not overlap with the gate conductor, and is spaced apart from the base; and a semiconductor pattern disposed on the gate insulating layer and overlapping with the gate electrode, wherein edges of the gate insulating layer project further than edges of the gate conductor and edges of the semiconductor pattern.