-
公开(公告)号：US09843023B2
公开(公告)日：2017-12-12
申请号：US14837045
申请日：2015-08-27
发明人： Sanghwan Cho , Seungyong Song , Jonglam Lee , Chungsock Choi , Bola Lee , Illhwan Lee
CPC分类号： H01L51/5275 , H01L51/5253
摘要： A display device including a substrate, a display unit on the substrate and including a display element for displaying an image, at least one organic encapsulation film formed on the display unit, and at least one refractive-index control encapsulation film adjacent to the at least one organic encapsulation film. A refractive index of a region of the at least one refractive-index control encapsulation film closer to the at least one organic encapsulation film is closer to a refractive index of the at least one organic encapsulation film than is a refractive index of a region of the at least one refractive-index control encapsulation film further from the at least one organic encapsulation film.
-
公开(公告)号：US10599000B2
公开(公告)日：2020-03-24
申请号：US15435227
申请日：2017-02-16
发明人： Sang Hwan Cho , Jong Lam Lee , Chung Sock Choi , So Young Lee , Sun Young Jung , Illhwan Lee , Ki Ryong Jeong
IPC分类号： G02F1/01 , G02F1/1523 , G02F1/1506 , E06B3/67 , E06B9/24 , G02F1/155 , G02F1/157 , G02F1/163
摘要： The present disclosure provides a smart window including a first base layer and a second base layer positioned to face each other; a first conductive layer and a second conductive layer respectively positioned at inner surfaces of the first base layer and the second base layer; and an electrolyte layer interposed between the first conductive layer and the second conductive layer, wherein the first conductive layer includes a plurality of first nanostructures, and the second conductive layer includes a plurality of second nanostructures having a different average length from the plurality of first nanostructures.
-
公开(公告)号：US11864421B2
公开(公告)日：2024-01-02
申请号：US17034252
申请日：2020-09-28
发明人： Jinsuk Lee , Jin Jeon , Sugwoo Jung , Shinbeom Choi , Youngin Hwang , Byungno Kim , Heeyeon Kim , Kohei Ebisuno , Nalae Lee , Illhwan Lee , Jongmin Lee , Joohyeon Jo , Changha Kwak , Yongseon Jo
IPC分类号： H01L27/32 , H10K59/121 , H10K77/10 , H01L27/12 , H01L29/786 , H10K59/12 , H10K102/00
CPC分类号： H10K59/1213 , H10K77/111 , H01L27/1218 , H01L27/1262 , H01L29/78603 , H10K59/1201 , H10K2102/311
摘要： Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
-
4.发明公开公开(公告)号：US20240090265A1
公开(公告)日：2024-03-14
申请号：US18508151
申请日：2023-11-13
发明人： Jinsuk Lee , Jin Jeon , Sugwoo Jung , Shinbeom Choi , Youngin Hwang , Byungno Kim , Heeyeon Kim , Kohei EBISUNO , Nalae Lee , Illhwan Lee , Jongmin Lee , Joohyeon Jo , Changha Kwak , Yongseon Jo
IPC分类号： H10K59/121 , H10K77/10
CPC分类号： H10K59/1213 , H10K77/111 , H01L27/1218
摘要： Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
-
公开(公告)号：US20210265438A1
公开(公告)日：2021-08-26
申请号：US17034252
申请日：2020-09-28
发明人： Jinsuk Lee , Jin Jeon , Sugwoo Jung , Shinbeom Choi , Youngin Hwang , Byungno Kim , Heeyeon Kim , Kohei EBISUNO , Nalae Lee , Illhwan Lee , Jongmin Lee , Joohyeon Jo , Changha Kwak , Yongseon Jo
摘要： Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
-
-
-
-
搜索结果
5 条记录 (耗时 0.031 秒)
