Abstract:
A display device includes: a substrate; a first conductive layer on the substrate and including a lower conductive pattern and a capacitor conductive pattern spaced apart from the lower conductive pattern in a plan view; an active layer on the first conductive layer, partially overlapping the lower conductive pattern and the capacitor conductive pattern in the plan view, and including a driving active pattern defining a storage capacitor together with the capacitor conductive pattern; a second conductive layer on the active layer, partially overlapping the lower conductive pattern and the driving active pattern in the plan view, and including a control pattern defining a driving transistor together with the driving active pattern; and a third conductive layer on the second conductive layer and including an anode electrode partially overlapping the lower conductive pattern in the plan view.
Abstract:
A display device includes a base substrate, a circuit layer including a transistor including a gate electrode, an auxiliary conductive layer, a first insulating layer disposed on the transistor and the auxiliary conductive layer, and a second insulating layer disposed on the first insulating layer, and a display element layer including a pixel defining layer disposed on the circuit layer and a light-emitting element including a first electrode, a functional layer, and a second electrode, which are sequentially stacked.
Abstract:
A display panel includes a base substrate, a transistor disposed on the base substrate and including a semiconductor pattern including a source area, a drain area, and an active area, a gate insulating pattern layer disposed on the semiconductor pattern, and a gate electrode disposed on the gate insulating pattern, and connection electrodes disposed on the gate insulating pattern layer and connected to the semiconductor pattern through contact holes, respectively. The gate insulating pattern layer includes a first portion overlapping at least one of the source area and the drain area and a second portion extending from the first portion. A thickness of the first portion is equal to or smaller than about 50% of a thickness of the second portion.
Abstract:
A display device includes a pixel, a first pad electrode disposed around the pixel, a buffer layer disposed on the first pad electrode, a first insulating layer disposed on the buffer layer, and a second pad electrode disposed on the first insulating layer, the second pad electrode being electrically connected to the first pad electrode through a contact hole in the first insulating layer and the buffer layer. A first step, a second step below the first step, and a third step below the second step are defined on the first insulating layer and the buffer layer around the first pad electrode and the second pad electrode.
Abstract:
A thin film transistor array panel includes: a gate line disposed on a substrate and including a first connection member of a gate driver region and a gate electrode of a display area, a gate insulating layer disposed on the substrate and having a first contact hole exposing the first connection member, a semiconductor layer disposed on a region of the gate insulating layer, a data line disposed on the gate insulating layer and the semiconductor layer and including a drain electrode, a source electrode, and a second connection member connected to the first connection member through the first contact hole, a passivation layer disposed on the data line, the source electrode, the drain electrode, and the second connection member, and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode. A horizontal width of the first contact hole ranges from 1 to 2 μm.
Abstract:
A thin film transistor array panel includes: a gate line disposed on a substrate and including a first connection member of a gate driver region and a gate electrode of a display area, a gate insulating layer disposed on the substrate and having a first contact hole exposing the first connection member, a semiconductor layer disposed on a region of the gate insulating layer, a data line disposed on the gate insulating layer and the semiconductor layer and including a drain electrode, a source electrode, and a second connection member connected to the first connection member through the first contact hole, a passivation layer disposed on the data line, the source electrode, the drain electrode, and the second connection member, and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode. A horizontal width of the first contact hole ranges from 1 to 2 μm.