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    Organic light emitting display device and method of manufacturing an organic light emitting display device
    1.
    发明授权
    Organic light emitting display device and method of manufacturing an organic light emitting display device 有权

    公开(公告)号：US10199448B2

    公开(公告)日：2019-02-05

    申请号：US15625480

    申请日：2017-06-16

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Sun-Kwang Kim ,  Ki-Nyeng Kang ,  Jin-Koo Kang ,  Bek-Hyun Lim

    IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L27/32 ,  H01L51/00 ,  H01L29/786 ,  H01L27/12

    摘要： An organic light emitting display (OLED) device includes a substrate comprising a display region and a peripheral region. The OLED device further includes a conductive layer disposed in the peripheral region on the substrate and including an opening portion exposing at least a portion of the substrate, the conductive layer having an undercut shape. The OLED device additionally includes an insulation layer disposed on the conductive layer, the insulation layer including an opening that exposes the opening portion. The OLED device further includes a common layer disposed in both the display region and the peripheral region on the insulation layer and on the substrate exposed by the opening portion. The common layer disposed on the substrate exposed by the opening portion is spaced apart from the common layer disposed on the insulation layer.

    THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME
    4.
    发明申请
    THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20150243793A1

    公开(公告)日：2015-08-27

    申请号：US14620907

    申请日：2015-02-12

    申请人： Samsung Display Co., Ltd.

    发明人： Woong-Hee Jeong ,  Sun-Kwang Kim ,  Hyeon-Sik Kim ,  Byung-Du Ahn ,  Chaun-Gi Choi

    IPC分类号： H01L29/786 ,  H01L29/66

    CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

    摘要： A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate. The oxide semiconductor layer is formed on the gate insulating layer and includes a source, a channel and a drain region. The oxide buffer layer is formed on the oxide semiconductor layer, and has a carrier concentration lower than that of the oxide semiconductor layer. The protective layer is formed on the oxide buffer layer and the gate insulating layer, and has contact holes formed therein so that the oxide buffer layer in the source and drain regions are exposed therethrough. The source and drain electrodes are coupled with the oxide buffer layer in the source and drain regions through the contact holes.

    摘要翻译： 薄膜晶体管包括栅电极，栅极绝缘层，氧化物半导体层，氧化物缓冲层，保护层以及源极和漏极。 栅电极形成在基板上。 栅极绝缘层形成在基板上。 氧化物半导体层形成在栅极绝缘层上并且包括源极，沟道和漏极区。 氧化物缓冲层形成在氧化物半导体层上，其载流子浓度低于氧化物半导体层的载流子浓度。 保护层形成在氧化物缓冲层和栅极绝缘层上，并且在其中形成有接触孔，使得源极和漏极区域中的氧化物缓冲层暴露在其中。 源电极和漏电极通过接触孔与源区和漏区中的氧化物缓冲层耦合。

    Display panel
    5.
    发明授权
    Display panel 有权

    公开(公告)号：US10431643B2

    公开(公告)日：2019-10-01

    申请号：US15364776

    申请日：2016-11-30

    申请人： Samsung Display Co., Ltd.

    发明人： Ki-Nyeng Kang ,  Sun-Kwang Kim ,  Joo-Sun Yoon ,  Jong-Hyun Choi

    IPC分类号： H01L27/32 ,  H01L51/52 ,  H01L51/56

    摘要： A display panel includes a signal line extending in a first direction and/or a second direction crossing the first direction, a first transistor electrically connected to the signal line, and including a first active pattern and a first gate electrode, and a first electrode electrically connected to the first transistor. A plurality of openings is defined in the signal line in way such that the signal line transmits an external light therethrough.

    Thin film transistor and method for fabricating the same
    6.
    发明授权
    Thin film transistor and method for fabricating the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US09570624B2

    公开(公告)日：2017-02-14

    申请号：US14620907

    申请日：2015-02-12

    申请人： Samsung Display Co., Ltd.

    发明人： Woong-Hee Jeong ,  Sun-Kwang Kim ,  Hyeon-Sik Kim ,  Byung-Du Ahn ,  Chaun-Gi Choi

    IPC分类号： H01L29/786 ,  H01L29/66

    CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

    摘要： A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source and drain electrodes. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate. The oxide semiconductor layer is formed on the gate insulating layer and includes a source, a channel and a drain region. The oxide buffer layer is formed on the oxide semiconductor layer, and has a carrier concentration lower than that of the oxide semiconductor layer. The protective layer is formed on the oxide buffer layer and the gate insulating layer, and has contact holes formed therein so that the oxide buffer layer in the source and drain regions are exposed therethrough. The source and drain electrodes are coupled with the oxide buffer layer in the source and drain regions through the contact holes.

    摘要翻译： 薄膜晶体管包括栅电极，栅极绝缘层，氧化物半导体层，氧化物缓冲层，保护层以及源极和漏极。 栅电极形成在基板上。 栅极绝缘层形成在基板上。 氧化物半导体层形成在栅极绝缘层上并且包括源极，沟道和漏极区。 氧化物缓冲层形成在氧化物半导体层上，其载流子浓度低于氧化物半导体层的载流子浓度。 保护层形成在氧化物缓冲层和栅极绝缘层上，并且在其中形成有接触孔，使得源极和漏极区域中的氧化物缓冲层暴露在其中。 源电极和漏电极通过接触孔与源区和漏区中的氧化物缓冲层耦合。

    Organic light emitting display device and method of manufacturing an organic light emitting display device
    8.
    发明授权
    Organic light emitting display device and method of manufacturing an organic light emitting display device 有权

    公开(公告)号：US10535725B2

    公开(公告)日：2020-01-14

    申请号：US16239704

    申请日：2019-01-04

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Sun-Kwang Kim ,  Ki-Nyeng Kang ,  Jin-Koo Kang ,  Bek-Hyun Lim

    IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56 ,  H01L29/786 ,  H01L27/12

    摘要： An organic light emitting display (OLED) device includes a substrate comprising a display region and a peripheral region. The OLED device further includes a conductive layer disposed in the peripheral region on the substrate and including an opening portion exposing at least a portion of the substrate, the conductive layer having an undercut shape. The OLED device additionally includes an insulation layer disposed on the conductive layer, the insulation layer including an opening that exposes the opening portion. The OLED device further includes a common layer disposed in both the display region and the peripheral region on the insulation layer and on the substrate exposed by the opening portion. The common layer disposed on the substrate exposed by the opening portion is spaced apart from the common layer disposed on the insulation layer.

    Thin film transistor and organic light emitting diode display having minimal overlap of gate electrode by source and drain electrodes
    9.
    发明授权
    Thin film transistor and organic light emitting diode display having minimal overlap of gate electrode by source and drain electrodes 有权
    薄膜晶体管和有机发光二极管显示器通过源电极和漏电极具有最小的栅电极重叠

    公开(公告)号：US09214564B2

    公开(公告)日：2015-12-15

    申请号：US14096939

    申请日：2013-12-04

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Chaun-Gi Choi ,  Sun-Kwang Kim ,  Hui-Won Yang ,  Sang-Il Park

    IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01J1/62 ,  H01J63/04 ,  H01L29/786 ,  H01L27/32 ,  H01L29/417 ,  H01L21/00 ,  H01L21/84

    CPC分类号： H01L29/7869 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/41733

    摘要： A thin film transistor (TFT) includes a gate electrode disposed on a substrate. An oxide semiconductor layer is disposed on the gate electrode. An insulation layer is disposed on the oxide semiconductor layer. The insulation layer includes a first contact hole that exposes a first part of the oxide semiconductor layer corresponding to a first end of the gate electrode and a second contact hole that exposes a second part of the oxide semiconductor layer corresponding to an opposite end of the gate electrode. A source electrode is disposed on the insulation layer and contacts the first part of the oxide semiconductor layer through the first contact hole. A drain electrode is disposed on the insulation layer and contacts the second part of the oxide semiconductor layer through the second contact hole.

    摘要翻译： 薄膜晶体管（TFT）包括设置在基板上的栅电极。 氧化物半导体层设置在栅电极上。 在氧化物半导体层上设置绝缘层。 绝缘层包括第一接触孔，其暴露与栅电极的第一端相对应的氧化物半导体层的第一部分，以及第二接触孔，其暴露与栅极的相对端对应的氧化物半导体层的第二部分 电极。 源电极设置在绝缘层上，并通过第一接触孔与氧化物半导体层的第一部分接触。 漏电极设置在绝缘层上，并通过第二接触孔与氧化物半导体层的第二部分接触。

    THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY
    10.
    发明申请
    THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY 有权
    薄膜晶体管和有机发光二极管显示

    公开(公告)号：US20150001484A1

    公开(公告)日：2015-01-01

    申请号：US14096939

    申请日：2013-12-04

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： CHAUN-GI CHOI ,  Sun-Kwang Kim ,  Hui-Won Yang ,  Sang-Il Park

    IPC分类号： H01L29/786 ,  H01L27/32

    CPC分类号： H01L29/7869 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/41733

    摘要： A thin film transistor (TFT) includes a gate electrode disposed on a substrate. An oxide semiconductor layer is disposed on the gate electrode. An insulation layer is disposed on the oxide semiconductor layer. The insulation layer includes a first contact hole that exposes a first part of the oxide semiconductor layer corresponding to a first end of the gate electrode and a second contact hole that exposes a second part of the oxide semiconductor layer corresponding to an opposite end of the gate electrode. A source electrode is disposed on the insulation layer and contacts the first part of the oxide semiconductor layer through the first contact hole. A drain electrode is disposed on the insulation layer and contacts the second part of the oxide semiconductor layer through the second contact hole.

    摘要翻译： 薄膜晶体管（TFT）包括设置在基板上的栅电极。 氧化物半导体层设置在栅电极上。 绝缘层设置在氧化物半导体层上。 绝缘层包括第一接触孔，其暴露与栅电极的第一端相对应的氧化物半导体层的第一部分，以及第二接触孔，其暴露与栅极的相对端对应的氧化物半导体层的第二部分 电极。 源电极设置在绝缘层上，并通过第一接触孔与氧化物半导体层的第一部分接触。 漏电极设置在绝缘层上，并通过第二接触孔与氧化物半导体层的第二部分接触。