公开(公告)号：US09614020B2

公开(公告)日：2017-04-04

申请号：US14817900

申请日：2015-08-04

Applicant: Samsung Display Co., Ltd.

Inventor： Shin-Hyuk Yang ,  Tae-Young Kim ,  Hye-Hyang Park

IPC: H01L31/036 ,  H01L27/32 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L29/423 ,  H01L21/477 ,  H01L21/4757

CPC classification number: H01L27/3262 ,  H01L21/47576 ,  H01L21/477 ,  H01L27/3248 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: An oxide semiconductor device includes a first insulation layer pattern and a second insulation layer pattern disposed on a substrate, an active layer disposed on the first and second insulation layer patterns, the active layer including a source region including the first insulation layer pattern, a drain region including the second insulation layer pattern, and a channel region disposed between the source and drain regions, a source electrode contacting the source region, and a drain electrode contacting the drain region.

公开(公告)号：US10014172B2

公开(公告)日：2018-07-03

申请号：US14478273

申请日：2014-09-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byung-Du Ahn ,  Tae-Young Kim ,  Yeon-Gon Mo

IPC: H01L21/02 ,  G02F1/1368 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L21/02472 ,  G02F1/1368 ,  H01L21/02441 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: A thin film transistor including a gate electrode; an active layer insulated from the gate electrode; a source electrode and a drain electrode that are insulated from the gate electrode and are electrically connected to the active layer; a first etch stopper layer that is formed of an insulation material and contacts a portion of the active layer located between areas of the active layer that are electrically connected to the source electrode and the drain electrode; a second etch stopper layer on the first etch stopper layer, the second etch stopper layer being formed of an insulation material of a same type as the insulation material used to form the first etch stopper layer, the second etch stopper layer having a higher density than the first etch stopper layer; and a third etch stopper layer on the second etch stopper layer.

公开(公告)号：US20140312315A1

公开(公告)日：2014-10-23

申请号：US14011700

申请日：2013-08-27

Applicant: Samsung Display Co., Ltd.

Inventor： Il-Joon Kang ,  Young-Mi Cho ,  Tae-Young Kim ,  Kwang-Suk Kim

IPC: H01L29/786 ,  H01L51/56 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3244 ,  H01L29/66969 ,  H01L29/78693 ,  H01L51/56

Abstract: According to an aspect of the present invention, there is provided a back plane for a flat-panel display device and a method of manufacturing the same. The back plane including: a substrate; a gate electrode on the substrate; a first insulation layer on the substrate and covering the gate electrode; a semiconductor layer on the first insulation layer and corresponding to the gate electrode; and a source electrode and a drain electrode on the semiconductor layer and electrically coupled to respective portions of the semiconductor layer. Here, the semiconductor layer includes indium, tin, zinc, and gallium, and an atomic concentration of the gallium is from about 5% to about 15%.

Abstract translation: 根据本发明的一个方面，提供了一种用于平板显示装置的背板及其制造方法。 背面包括：基材; 基板上的栅电极; 在所述基板上的第一绝缘层，并覆盖所述栅电极; 在所述第一绝缘层上并对应于所述栅电极的半导体层; 以及在半导体层上的源电极和漏电极，并电耦合到半导体层的各个部分。 这里，半导体层包括铟，锡，锌和镓，并且镓的原子浓度为约5％至约15％。