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公开(公告)号：US20230216470A1
公开(公告)日：2023-07-06
申请号：US17824145
申请日：2022-05-25
发明人： Won HAN , Hwa Sun LEE , Jeong Hoon RYOU , Moon Chul LEE , Tae Yoon KIM , Sang Kee YOON , Yong Suk KIM , Joung Hun KIM , Sung Jun LEE , Sung Joon PARK
CPC分类号： H03H9/0211 , H03H9/173 , H03H9/02102
摘要： A bulk acoustic wave resonator includes a substrate; a central portion including a first portion of a first electrode, a first portion of a piezoelectric layer, and a first portion of a second electrode laminated in order on the substrate; and a reflective region disposed laterally of the central portion and including a second portion of the first electrode, an insertion layer, a second portion of the piezoelectric layer, and a second portion of the second electrode. A side surface of the insertion layer adjacent to the central portion has an inclined surface, the first portion of the second electrode and the second portion of the second electrode are coplanar, and an end of the second electrode overlaps the inclined surface of the insertion layer in the reflective region.
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公开(公告)号：US20230084640A1
公开(公告)日：2023-03-16
申请号：US17684732
申请日：2022-03-02
发明人： Nam Jung LEE , Tae Yoon KIM
摘要： An acoustic resonator package includes a substrate, a cap including a protrusion portion protruding toward the substrate, an acoustic resonator disposed between the substrate and the cap and including a first electrode, a piezoelectric layer, and a second electrode, a metal layer connected to one of the first electrode and the second electrode, and a conductive pad at least partially disposed between the protrusion portion and the metal layer and extending in a first direction different from a second direction in which the acoustic resonator faces the conductive pad.
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公开(公告)号：US20200373900A1
公开(公告)日：2020-11-26
申请号：US16992434
申请日：2020-08-13
发明人： Tae Kyung LEE , Tae Yoon KIM , Sang Kee YOON , Chang Hyun LIM , Jong Woon KIM , Moon Chul LEE
摘要： An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.
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公开(公告)号：US20200252051A1
公开(公告)日：2020-08-06
申请号：US16388979
申请日：2019-04-19
发明人： Won HAN , Tae Yoon KIM , Sang Uk SON , Chang Hyun LIM
摘要： A bulk-acoustic wave resonator includes a substrate; a membrane layer forming a cavity with the substrate; a first electrode at least partially disposed on an upper portion of the cavity including an end portion that is thicker than other portions of the first electrode; an insertion layer including a first portion disposed adjacent to from the end portion of the first electrode and a second portion disposed on an upper portion of the first electrode; a piezoelectric layer disposed to cover the insertion layer; and a second electrode disposed on an upper portion of the piezoelectric layer.
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公开(公告)号：US20200087141A1
公开(公告)日：2020-03-19
申请号：US16357588
申请日：2019-03-19
发明人： Tae Hun LEE , Kwang Su KIM , Tae Yoon KIM
摘要： A MEMS device includes a substrate, a MEMS element portion disposed on a surface of the substrate, a cap having a cavity formed to oppose the MEMS element portion, and a diffusion prevention layer formed on at least a portion of the cap, wherein at least one of the cap and the substrate includes a bonding layer disposed outside of the cavity, and wherein the cap includes a spreading prevention portion disposed between the bonding layer and the cavity and having a V-shape in cross-section.
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公开(公告)号：US20180337656A1
公开(公告)日：2018-11-22
申请号：US15814869
申请日：2017-11-16
发明人： Tae Hun LEE , Chang Hyun LIM , Tae Yoon KIM , Moon Chul LEE
摘要： A bulk acoustic wave resonator includes a substrate including a first via and a second via, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, and an upper electrode connection member spaced apart from the lower electrode connection member. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. The lower electrode connection member electrically connects the lower electrode to the first via and supports a first edge portion of the resonant portion. The upper electrode connection member electrically connects the upper electrode to the second via and supports a second edge portion of the resonant portion. Either one or both of the upper electrode connection member and the lower electrode connection member includes a respective extension portion connected to a respective one of the first via and the second via that is disposed below the resonant portion.
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公开(公告)号：US20180309427A1
公开(公告)日：2018-10-25
申请号：US15797224
申请日：2017-10-30
发明人： Tae Yoon KIM , Moon Chul LEE , Yoon Sok PARK
CPC分类号： H03H9/1014 , H03H3/02 , H03H9/02047 , H03H9/02157 , H03H9/173
摘要： A bulk acoustic wave resonator includes: support members disposed between air cavities; a resonant part including a first electrode, a piezoelectric layer, and a second electrode sequentially disposed above the air cavities and on the support members; and a wiring electrode connected either one or both of the first electrode and the second electrode, and disposed above one of the air cavities, wherein a width of an upper surface of the support members is greater than a width of a lower surface of the support members, and side surfaces of the support members connecting the upper surface and the lower surface to each other are inclined.
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公开(公告)号：US20180048287A1
公开(公告)日：2018-02-15
申请号：US15486806
申请日：2017-04-13
发明人： Tae Kyung LEE , Hwa Sun LEE , Hyun Min HWANG , Moon Chul LEE , Sung Sun KIM , Tae Yoon KIM
IPC分类号： H03H9/17 , H01L41/18 , H01L41/047
CPC分类号： H03H9/177 , H01L41/0477 , H01L41/18 , H03H9/02118 , H03H9/171 , H03H9/173
摘要： A bulk acoustic resonator may include a substrate; a resonating portion including a first electrode layer, a piezoelectric layer, and a second electrode layer which are sequentially stacked on the substrate, and partitioned into an active region and a non-active region; and a frame electrode layer including frame electrodes disposed within the active region to be spaced apart from each other along an outer circumference portion of the active region.
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公开(公告)号：US20180019726A1
公开(公告)日：2018-01-18
申请号：US15638809
申请日：2017-06-30
发明人： Sung HAN , Jae Chang LEE , Won HAN , Tae Yoon KIM , Jong Woon KIM , Tae Kyung LEE , Moon Chul LEE , Tae Hun LEE , Sung Min CHO , In Young KANG
CPC分类号： H03H9/1014 , H03H9/02086 , H03H9/02102 , H03H9/02118 , H03H9/02157 , H03H9/172 , H03H9/173 , H03H9/54
摘要： A bulk acoustic wave resonator device includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer disposed over a portion of the lower electrode; an upper electrode disposed on the piezoelectric layer; and a shape control layer covering an edge of a cavity disposed between the substrate and the lower electrode, wherein tensile stress is applied to the shape control layer during formation of the shape control layer.
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公开(公告)号：US20230080684A1
公开(公告)日：2023-03-16
申请号：US17859557
申请日：2022-07-07
发明人： Tae Yoon KIM , Joo Young KIM , Won Hyeong KIM , Hyung Sub WOO , Hyung Joon JEON , Young Bin JEONG
IPC分类号： H01G4/30 , H01G4/12 , H01G4/012 , C04B35/626 , C04B35/468 , C04B35/64
摘要： A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of first secondary phases, the first secondary phase is a secondary phase including Ni, Mg, Al, Si, and O, and at least one of the plurality of first secondary phases has a ratio of a major axis length to a minor axis length of 4 or more.
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