中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.015 seconds)

    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS UTILIZING HIGH CRYSTALLIZATION TEMPERATURE-CONTAINING INSERTION LAYER(S)
    3.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS UTILIZING HIGH CRYSTALLIZATION TEMPERATURE-CONTAINING INSERTION LAYER(S) 审中-公开

    公开(公告)号：US20190066747A1

    公开(公告)日：2019-02-28

    申请号：US15974589

    申请日：2018-05-08

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Don Koun Lee ,  Mohamad Towfik Krounbi

    IPC: G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

    Abstract: A magnetic device and method for providing the magnetic device junction are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes a pinned layer, a perpendicular enhancement layer (PEL), an insertion layer between the pinned layer and PEL, a free layer and a nonmagnetic spacer layer between the PEL and free layer. The insertion layer includes at least one magnetic material and at least one high crystallization temperature nonmagnetic material. The PEL is between the insertion layer and the nonmagnetic spacer layer. The free layer is switchable between a plurality of stable magnetic states. The PEL and free and pinned layers each has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy. The SO active layer(s) are adjacent to the free layer, carry a current in-plane and exert a SO torque on the free layer due to the current.

    Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s)
    5.
    发明授权
    Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s) 有权

    公开(公告)号：US10297301B2

    公开(公告)日：2019-05-21

    申请号：US15974589

    申请日：2018-05-08

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Don Koun Lee ,  Mohamad Towfik Krounbi

    IPC: G11C11/16 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  G11C7/04

    Abstract: A magnetic device and method for providing the magnetic device junction are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes a pinned layer, a perpendicular enhancement layer (PEL), an insertion layer between the pinned layer and PEL, a free layer and a nonmagnetic spacer layer between the PEL and free layer. The insertion layer includes at least one magnetic material and at least one high crystallization temperature nonmagnetic material. The PEL is between the insertion layer and the nonmagnetic spacer layer. The free layer is switchable between a plurality of stable magnetic states. The PEL and free and pinned layers each has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy. The SO active layer(s) are adjacent to the free layer, carry a current in-plane and exert a SO torque on the free layer due to the current.

    Method and system for providing a magnetic junction usable in spin transfer torque applications using a post-pattern anneal
    6.
    发明授权
    Method and system for providing a magnetic junction usable in spin transfer torque applications using a post-pattern anneal 有权

    公开(公告)号：US10164177B2

    公开(公告)日：2018-12-25

    申请号：US15445695

    申请日：2017-02-28

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Sebastian Schafer ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Don Koun Lee

    IPC: H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. A first portion of a magnetoresistive stack corresponding to the magnetic junction is provided. Providing this portion of the magnetoresistive stack includes providing at least one layer for a free layer of the magnetic junction. A second portion of the magnetoresistive stack is provided after the step of providing the first portion of the magnetoresistive stack. The magnetoresistive stack is patterned to provide the magnetic junction after the step of providing the second portion of the magnetoresistive stack. An ambient temperature for the magnetoresistive stack and the magnetic junction does not exceed a crystallization temperature of the free layer after the step of providing the free layer through the step of patterning the magnetoresistive stack. The magnetic junction is annealed at an anneal temperature not less than the crystallization temperature after the step of patterning the magnetoresistive stack.

Patent Agency Ranking