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1.发明申请METHOD AND SYSTEM FOR PROVIDING A TOP PINNED LAYER PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 审中-公开用于提供顶针式层的方法和系统可用于旋转传动扭矩磁性随机存取存储器应用中的全息磁性ANISOTROPY磁性连接公开(公告)号：US20150129996A1
公开(公告)日：2015-05-14
申请号：US14184664
申请日：2014-02-19
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Jang Eun Lee , Kiseok Moon
CPC classification number: H01L43/12 , G11C11/161 , G11C11/1675 , H01L43/08 , H01L43/10
Abstract: A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. A free layer and nonmagnetic spacer layer are provided. The free layer and nonmagnetic spacer layer are annealed at an anneal temperature of at least three hundred fifty degrees Celsius. A pinned layer is provided after the annealing step. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 描述了一种用于提供可用于磁性装置和磁结的磁结的方法。 提供自由层和非磁性间隔层。 自由层和非磁性间隔层在至少三十五摄氏度的退火温度下退火。 在退火步骤之后提供钉扎层。 非磁性间隔层位于被钉扎层和自由层之间。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。
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