公开(公告)号：US20230223347A1

公开(公告)日：2023-07-13

申请号：US18114358

申请日：2023-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONGHO PARK ,  Seung Hwan Kim ,  Jung Young Oh ,  Kyong Hwan Koh ,  Sangsoo Kim ,  Dong-Ju Jang

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/16 ,  H01L23/31

CPC classification number: H01L23/5384 ,  H01L23/5385 ,  H01L25/0652 ,  H01L23/16 ,  H01L23/31

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.

公开(公告)号：US20220234069A1

公开(公告)日：2022-07-28

申请号：US17453506

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONGKEUN LEE ,  JONGHO PARK

IPC: B05C5/02 ,  G03F7/16

Abstract: The inventive concept provides an apparatus for processing a substrate. The apparatus includes a mount; a processing liquid supply nozzle configured to provide a processing liquid to the substrate and a discharge container including: a base plate including a liquid outlet and an exhaust port; an inner wall standing on an inner circumference of the base plate; an outer wall standing on an outer circumference of the base plate; and a barrier standing on the base plate to separate a first space connected to the liquid outlet from a second space connected to the exhaust port. The apparatus further includes an inner cover configured to guide the flow of a processing liquid from the substrate supported by the mount to the first space of the discharge container; and a flow guide mounted in the first space of the discharge container.

公开(公告)号：US20210366832A1

公开(公告)日：2021-11-25

申请号：US17392705

申请日：2021-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONGHO PARK ,  SEUNG HWAN KIM ,  JUN YOUNG OH ,  Kyong Hwan KOH ,  SANGSOO KIM ,  DONG-JU JANG

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/16 ,  H01L23/31

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.

公开(公告)号：US20240250008A1

公开(公告)日：2024-07-25

申请号：US18453422

申请日：2023-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUSUK KANG ,  JU-IL CHOI ,  SUNG KEUN PARK ,  JONGHO PARK ,  HYUNJU LEE ,  JAEMOK JUNG

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L25/10

CPC classification number: H01L23/49822 ,  H01L23/3107 ,  H01L23/49838 ,  H01L23/49866 ,  H01L24/16 ,  H01L25/105 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/35121

Abstract: A semiconductor package, comprising a redistribution substrate including an insulating layer and a first redistribution pattern; and a semiconductor chip electrically connected to the redistribution substrate, wherein the first redistribution pattern comprises a first barrier layer; a second barrier layer on the first barrier layer; and a via structure on the second barrier layer, wherein the first barrier layer comprises a first conductive material and the second barrier layer comprises a second conductive material different from the first conductive material.

公开(公告)号：US20230103196A1

公开(公告)日：2023-03-30

申请号：US17740508

申请日：2022-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： GYUHO KANG ,  JONGHO PARK ,  SEONG-HOON BAE ,  JEONGGI JIN ,  JU-IL CHOI ,  ATSUSHI FUJISAKI

IPC: H01L23/48 ,  H01L25/10 ,  H01L23/00 ,  H01L23/498

Abstract: A semiconductor device includes a first redistribution substrate, a semiconductor chip on a top surface of the first redistribution substrate, a conductive structure on the top surface of the first redistribution substrate and laterally spaced apart from the semiconductor chip, and a molding layer on the first redistribution substrate and covering a sidewall of the semiconductor chip and a sidewall of the conductive structure. The conductive structure includes a first conductive structure having a first sidewall, and a second conductive structure on a top surface of the first conductive structure and having a second sidewall. The first conductive structure has an undercut at a lower portion of the first sidewall. The second conductive structure has a protrusion at a lower portion of the second sidewall.

公开(公告)号：US20220302115A1

公开(公告)日：2022-09-22

申请号：US17831861

申请日：2022-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONGHO PARK ,  JAEYEOL SONG ,  WANDON KIM ,  BYOUNGHOON LEE ,  MUSARRAT HASAN

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/161 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device includes first and second active patterns on first and second active regions of a substrate, respectively, a pair of first source/drain patterns and a first channel pattern therebetween which are in an upper portion of the first active pattern, a pair of second source/drain patterns and a second channel pattern therebetween which are in an upper portion of the second active pattern, and first and second gate electrodes intersecting the first and second channel patterns, respectively. Each of the first and second gate electrodes includes a first metal pattern adjacent to a corresponding one of the first and second channel patterns. The first and second channel patterns include SiGe. A Ge concentration of the second channel pattern is higher than a Ge concentration of the first channel pattern. A thickness of the first metal pattern of the second gate electrode is greater than a thickness of the first metal pattern of the first gate electrode.

公开(公告)号：US20230042063A1

公开(公告)日：2023-02-09

申请号：US17852054

申请日：2022-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEONGHOON BAE ,  JUIL CHOI ,  GYUHO KANG ,  JONGHO PARK ,  ATSUSHI FUJISAKI

IPC: H01L25/065 ,  H01L23/538 ,  H01L23/367 ,  H01L23/31 ,  H01L23/00

Abstract: A semiconductor package includes; laterally stacked semiconductor blocks disposed side by side in a first horizontal direction on a redistribution structure, wherein each semiconductor block among the laterally stacked semiconductor blocks includes laterally stacked semiconductor chips, a heat dissipation plate, and a first molding member on the laterally stacked semiconductor chips.

公开(公告)号：US20220085183A1

公开(公告)日：2022-03-17

申请号：US17531903

申请日：2021-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BYOUNGHOON LEE ,  JONGHO PARK ,  WANDON KIM ,  SANGJIN HYUN

IPC: H01L29/49 ,  H01L27/088 ,  H01L29/78 ,  H01L29/51 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having first and second active regions, first and second active patterns on the first and second active regions, first and second gate electrodes running across the first and second active patterns, and a high-k dielectric layer between the first active pattern and the first gate electrode and between the second active pattern and the second gate electrode. The first gate electrode includes a work function metal pattern and an electrode pattern. The second gate electrode includes a first work function metal pattern, a second work function metal pattern, and an electrode pattern. The first work function metal pattern contains the same impurity as that of the high-k dielectric layer. An impurity concentration of the first work function metal pattern of the second gate electrode is greater than that of the work function metal pattern of the first gate electrode.

公开(公告)号：US20210035913A1

公开(公告)日：2021-02-04

申请号：US16845890

申请日：2020-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONGHO PARK ,  Seung Hwan Kim ,  Jun Young Oh ,  Kyong Hwan Koh ,  Sangsoo Kim ,  Dong-Ju Jang

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/16 ,  H01L25/065

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.

公开(公告)号：US20210082917A1

公开(公告)日：2021-03-18

申请号：US16840880

申请日：2020-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONGHO PARK ,  JAEYEOL SONG ,  WANDON KIM ,  BYOUNGHOON LEE ,  MUSARRAT HASAN

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/161 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device includes first and second active patterns on first and second active regions of a substrate, respectively, a pair of first source/drain patterns and a first channel pattern therebetween which are in an upper portion of the first active pattern, a pair of second source/drain patterns and a second channel pattern therebetween which are in an upper portion of the second active pattern, and first and second gate electrodes intersecting the first and second channel patterns, respectively. Each of the first and second gate electrodes includes a first metal pattern adjacent to a corresponding one of the first and second channel patterns. The first and second channel patterns include SiGe. A Ge concentration of the second channel pattern is higher than a Ge concentration of the first channel pattern. A thickness of the first metal pattern of the second gate electrode is greater than a thickness of the first metal pattern of the first gate electrode.