公开(公告)号：US20220165495A1

公开(公告)日：2022-05-26

申请号：US17160533

申请日：2021-01-28

申请人： Samsung Electronics Co., Ltd.

发明人： Yan Wang ,  Valentina Lacivita ,  Ali Hamze ,  Jeong-Ju Cho

IPC分类号： H01G4/12 ,  C01G25/00 ,  C01G27/00 ,  C01G35/00 ,  C01G33/00 ,  C01G41/00 ,  C23C14/08 ,  C23C14/34 ,  H01G4/30 ,  H01G13/00 ,  H01L29/51 ,  H01L29/78

摘要： An electronic device comprises a first blocking electrode; a second blocking electrode; and a dielectric material disposed between the first electrode and the second electrode, the dielectric material comprising a compound of Formula 1 Li24-b*y-c*z-a*xM1yM2zM3xO12-δ  (1) wherein M1 is a cationic element having an oxidation state of b, wherein b is +1, +2, +3, +4, +5, +6, or a combination thereof; M2 is a cationic element having an oxidation state of c, wherein c is +1, +2, +3, +4, +5, +6, or a combination thereof; M3 is a cationic element having an oxidation state of a, wherein a is +1, +3, +4, or a combination thereof; 0≤y≤3; 0≤z≤3; 0≤x≤5; and 0≤δ≤2. Methods for the manufacture of the electronic device are also disclosed.

公开(公告)号：US11848156B2

公开(公告)日：2023-12-19

申请号：US17160533

申请日：2021-01-28

申请人： Samsung Electronics Co., Ltd.

发明人： Yan Wang ,  Valentina Lacivita ,  Ali Hamze ,  Jeong-Ju Cho

IPC分类号： H01G4/12 ,  C01G27/00 ,  C01G33/00 ,  C01G35/00 ,  C01G41/00 ,  C23C14/08 ,  C23C14/34 ,  H01G4/30 ,  H01G13/00 ,  H01L29/51 ,  H01L29/78 ,  C01G25/00

CPC分类号： H01G4/1209 ,  C01G25/006 ,  C01G27/006 ,  C01G33/006 ,  C01G35/006 ,  C01G41/006 ,  C23C14/08 ,  C23C14/34 ,  H01G4/306 ,  H01G13/00 ,  H01L29/516 ,  H01L29/78391 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2006/32 ,  C01P2006/40

摘要： An electronic device comprises a first blocking electrode; a second blocking electrode; and a dielectric material disposed between the first electrode and the second electrode, the dielectric material comprising a compound of Formula 1

Li24-b*y-c*z-a*xM1yM2zM3xO12-δ  (1)

wherein M1 is a cationic element having an oxidation state of b, wherein b is +1, +2, +3, +4, +5, +6, or a combination thereof; M2 is a cationic element having an oxidation state of c, wherein c is +1, +2, +3, +4, +5, +6, or a combination thereof; M3 is a cationic element having an oxidation state of a, wherein a is +1, +3, +4, or a combination thereof; 0≤y≤3; 0≤z≤3; 0≤x≤5; and 0≤δ≤2. Methods for the manufacture of the electronic device are also disclosed.