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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220173053A1

    公开(公告)日：2022-06-02

    申请号：US17352503

    申请日：2021-06-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： NOH YEONG PARK ,  BEOMJIN PARK ,  DONG IL BAE ,  Sangwon BAEK ,  HYUN-SEUNG SONG

    IPC: H01L23/00 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

    Abstract: A semiconductor device may include a substrate including a first region and a second region and a first active pattern on the first region. The first active pattern may include a pair of first source/drain patterns and a first channel pattern therebetween, and the first channel pattern may include a plurality of first semiconductor patterns stacked on the substrate. The semiconductor device may further include a first gate electrode, which is provided on the first channel patterns, and a supporting pattern, which is provided on side surfaces of the plurality of first semiconductor patterns to connect the side surfaces of the plurality of first semiconductor patterns to each other.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220037317A1

    公开(公告)日：2022-02-03

    申请号：US17451688

    申请日：2021-10-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： BEOMJIN PARK ,  DONGIL BAE ,  DAEWON KIM ,  TAEYOUNG KIM ,  JOOHEE JUNG ,  JAEHOON SHIN

    IPC: H01L27/088 ,  H01L29/78 ,  H01L29/786 ,  H01L29/423

    Abstract: A semiconductor device includes an active pattern extending on a substrate in a first direction, divided into a plurality of regions by a separation region, and having a first edge portion exposed toward the separation region; first, second and third channel layers vertically separated and sequentially disposed on the active pattern; a first gate electrode extending in a second direction, intersecting the active pattern, and surrounding the first, second and third channel layers; source/drain regions disposed on the active pattern, on at least one side of the first gate electrode, and contacting the first, second and third channel layers; a semiconductor structure including first semiconductor layers and second semiconductor layers alternately stacked on the active pattern, and having a second edge portion exposed toward the separation region; and a blocking layer covering at least one of an upper surface, side surfaces, or the second edge portion, of the semiconductor structure.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250056861A1

    公开(公告)日：2025-02-13

    申请号：US18583006

    申请日：2024-02-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： SOOJIN JEONG ,  MYUNG GIL KANG ,  DONGWON KIM ,  BEOMJIN PARK ,  DONGSUK SHIN ,  HYUN-KWAN YU ,  WOOSUK CHOI ,  SEUNGPYO HONG

    IPC: H01L29/66 ,  H01L21/8238 ,  H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

    Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns that are spaced apart from each other, a source/drain pattern electrically connected to the plurality of semiconductor patterns, an inner gate electrode between adjacent first and second semiconductor patterns of the plurality of semiconductor patterns, an inner gate insulating layer between the inner gate electrode and the first and second semiconductor patterns, an inner high-k dielectric layer between the inner gate electrode and the inner gate insulating layer, and an inner spacer between the inner gate insulating layer and the source/drain pattern. As the inner gate insulating layer includes an inner gate spacer, the inner gate electrode may stably fill the inner gate space. As a result, the electrical characteristics of the semiconductor device may be improved.

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