公开(公告)号：US09548401B2

公开(公告)日：2017-01-17

申请号：US14698909

申请日：2015-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Hyun Yoo ,  Jin-Hyun Noh ,  Su-Tae Kim ,  Byeong-Ryeol Lee ,  Seong-Hun Jang ,  Jong-Sung Jeon

IPC: H01L29/02 ,  H01L29/94 ,  H01L29/78 ,  H01L27/06 ,  H01L29/10

CPC classification number: H01L29/94 ,  H01L27/0629 ,  H01L29/1041 ,  H01L29/7833 ,  H01L29/7838 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity diffusion region having a second doping concentration different from the first doping concentration, the at least one second impurity region being surrounded by the first impurity diffusion region; at least one electrode facing the first impurity diffusion region and the at least one second impurity diffusion region; and at least one insulating layer between the first impurity diffusion region and the at least one electrode, and between the at least one second impurity diffusion region and the at least one electrode.

Abstract translation: 一种半导体器件包括：衬底，其包括具有第一掺杂浓度的第一杂质扩散区域和具有不同于第一掺杂浓度的第二掺杂浓度的至少一个第二杂质扩散区域，所述至少一个第二杂质区域被第一杂质包围 扩散区; 面向所述第一杂质扩散区域和所述至少一个第二杂质扩散区域的至少一个电极; 以及在所述第一杂质扩散区域和所述至少一个电极之间以及所述至少一个第二杂质扩散区域和所述至少一个电极之间的至少一个绝缘层。

公开(公告)号：US09935167B2

公开(公告)日：2018-04-03

申请号：US15268833

申请日：2016-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Hyun Noh ,  Su-Tae Kim ,  Jae-Hyun Yoo ,  Byeong-Ryeol Lee ,  Jong-Sung Jeon

IPC: H01L29/00 ,  H01L29/06 ,  H01L29/78 ,  H01L29/161 ,  H01L27/088 ,  H01L29/423 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40 ,  H01L27/092 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L29/063 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1054 ,  H01L29/1095 ,  H01L29/161 ,  H01L29/165 ,  H01L29/408 ,  H01L29/4238 ,  H01L29/66545 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/785 ,  H01L29/7851

Abstract: Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice constant of the substrate, a first gate electrode on the channel layer, a first source region of a first conductivity type at a first side of the first gate electrode, a first body region of a second conductivity type under the first source region and contacting the first source region, a first drain region of the first conductivity type disposed at a second side of the first gate electrode, a first drift region of the first conductivity type under the first drain region and contacting the first drain region, and a first stud region in the channel layer and the first drift region. The first stud region has an impurity concentration higher than an impurity concentration of the first drift region.