公开(公告)号：US20170125254A1

公开(公告)日：2017-05-04

申请号：US15242190

申请日：2016-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangsu Kim ,  Byoung Jae PARK ,  Yongsun KO ,  Kyunghyun KIM ,  ChangSup MUN ,  Kijong PARK

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/02057 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

Abstract: The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target layer. A polarity of ions of the first post-treatment gas may be the same as a polarity of bias power applied to a stage in a plasma apparatus.