公开(公告)号：US20140141616A1

公开(公告)日：2014-05-22

申请号：US14086426

申请日：2013-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC: H01L21/321 ,  H01L21/02

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20210020462A1

公开(公告)日：2021-01-21

申请号：US16739409

申请日：2020-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon JEONG ,  Mihyun PARK ,  Yongsun KO ,  Kwangwook LEE ,  Kuntack LEE ,  Hayoung JEON ,  Yongjhin CHO ,  Jihoon CHA

IPC: H01L21/67 ,  H01L21/02 ,  B08B3/08

Abstract: A substrate cleaning apparatus includes a support inside a chamber to hold a substrate, a first supply source inside the chamber that includes a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray polymer and solvent onto the substrate to form a coating, and a second nozzle at an oblique angle to the first direction and facing an edge of the support to inject a hot gas toward the coating to volatilize the solvent, a second supply source inside the chamber and having a third nozzle facing the upper surface of the support to inject a peeling treatment to the coating to peel the coating from the substrate, and a third supply source inside the chamber and facing a lower surface of the support to inject the hot gas to heat a second surface of the substrate.

公开(公告)号：US20150287590A1

公开(公告)日：2015-10-08

申请号：US14669354

申请日：2015-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Min OH ,  Yongsun KO ,  Kwangsu KIM ,  SeokHoon KIM ,  ChangSup MUN ,  Kuntack LEE ,  Hyosan LEE ,  Jihoon JEONG ,  Yong-Jhin CHO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/02101 ,  H01L21/02057 ,  H01L21/76224 ,  H01L27/10852 ,  H01L27/11582

Abstract: Provided is a method of rinsing and drying a semiconductor device, including forming a pattern on a substrate; rinsing the substrate, where the pattern is formed, using a rinse solution; loading the substrate into a dry chamber; injecting supercritical carbon dioxide into the dry chamber such that rinse solution remaining on the pattern is diluted to have a concentration below 2 percent by weight based on a weight of the rinse solution remaining on the pattern and the supercritical carbon dioxide; and venting the supercritical carbon dioxide such that the dry chamber is maintained at atmospheric pressure to dry the substrate where the pattern is formed.

Abstract translation: 提供了一种冲洗和干燥半导体器件的方法，包括在衬底上形成图案; 使用冲洗溶液冲洗形成图案的基底; 将基板装载到干燥室中; 将超临界二氧化碳注射到干燥室中，使得保留在图案上的冲洗溶液基于残留在图案上的冲洗溶液的重量和超临界二氧化碳被稀释至具有低于2重量％的浓度; 并排出超临界二氧化碳，使得干燥室保持在大气压下，以干燥形成图案的基板。

公开(公告)号：US20140373881A1

公开(公告)日：2014-12-25

申请号：US14207903

申请日：2014-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Min OH ,  Kyoungseob KIM ,  Young-Hoo KIM ,  Yongsun KO ,  Kuntack LEE ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/68728 ,  H01L21/6875

Abstract: A substrate treating apparatus including a support member configured to support a substrate container configured to surround an upper portion of the support member, a nozzle member including at least one nozzle, which is configured to spray a treating solution onto the substrate disposed on the support member, and a treating solution supply unit connected to the nozzle and configured to supply the treating solution to the nozzle through a main tube may be provided.

Abstract translation: 一种基板处理装置，包括：支撑构件，其构造成支撑构造成围绕支撑构件的上部的基板容器;喷嘴构件，包括至少一个喷嘴，其构造成将处理溶液喷射到设置在支撑构件上的基板上; 并且可以设置连接到喷嘴并且被配置为通过主管将处理溶液供应到喷嘴的处理溶液供应单元。

公开(公告)号：US20140360041A1

公开(公告)日：2014-12-11

申请号：US14246274

申请日：2014-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon JEONG ,  Yongsun KO ,  Kuntack LEE ,  Kyoungseob KIM ,  SeokHoon KIM ,  Jung-Min OH ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01L21/02 ,  F26B25/06

CPC classification number: F26B25/06 ,  H01L21/67017 ,  H01L21/67109

Abstract: A substrate treating apparatus includes a fluid supply unit to supply a fluid to a chamber. The substrate is dried in the chamber using the fluid in a supercritical state. The fluid supply unit includes a storing tank to store the fluid and a conversion tank connected to the storing tank through a connection tube and to the chamber through a supply tube. The conversion tank includes a heater to heat the fluid.

Abstract translation: 基板处理装置包括向腔室供给流体的流体供给单元。 使用处于超临界状态的流体在室中干燥基板。 流体供给单元包括：储存容器，存储流体;以及转换槽，通过连接管连接到储存箱，并通过供给管连接到室。 转换罐包括用于加热流体的加热器。

公开(公告)号：US20170125254A1

公开(公告)日：2017-05-04

申请号：US15242190

申请日：2016-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangsu Kim ,  Byoung Jae PARK ,  Yongsun KO ,  Kyunghyun KIM ,  ChangSup MUN ,  Kijong PARK

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/02057 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

Abstract: The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target layer. A polarity of ions of the first post-treatment gas may be the same as a polarity of bias power applied to a stage in a plasma apparatus.

公开(公告)号：US20160032185A1

公开(公告)日：2016-02-04

申请号：US14879835

申请日：2015-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC: C09K13/06 ,  C23F1/26

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20150303036A1

公开(公告)日：2015-10-22

申请号：US14611618

申请日：2015-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon JEONG ,  Gil Hun SONG ,  Ki Sang EUM ,  Yongsun KO ,  Kuntack LEE ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01J37/32

CPC classification number: H01J37/32513

Abstract: A substrate treatment apparatus includes a seal on at least one of upper or lower chambers of a process chamber. The seal hermetically closes the substrate treatment region, and may be at a location to prevent a gap from forming between the upper and lower chambers. The lower chamber includes an inner wall and an outer wall defining a groove including the seal. The inner wall has a top surface lower than that of the outer wall. The seal has an atypical cross-sectional shape with a recess facing the substrate treatment region.

Abstract translation: 基板处理装置包括在处理室的上室或下室中的至少一个上的密封。 密封件密封地封闭基板处理区域，并且可以在防止在上部室和下部室之间形成间隙的位置。 下室包括限定包括密封件的槽的内壁和外壁。 内壁具有比外壁低的顶面。 密封件具有非对应的横截面形状，其具有面向衬底处理区域的凹部。

公开(公告)号：US20200227253A1

公开(公告)日：2020-07-16

申请号：US16561078

申请日：2019-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Byung-Kwon CHO ,  Jihoon JEONG ,  Youngtak KIM ,  Yongsun KO ,  Seulgee JEON

IPC: H01L21/02 ,  H01L21/67

Abstract: A supercritical drying apparatus and a method of drying a substrate, the apparatus including a drying chamber configured to receive a supercritical fluid and to dry a substrate; a chuck in the drying chamber, the chuck being configured to receive the substrate; and a particle remover in the drying chamber, the particle remover being configured to remove dry particles from the substrate by heating the substrate with radiant heat.

公开(公告)号：US20160343819A1

公开(公告)日：2016-11-24

申请号：US15133424

申请日：2016-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Jae-Hwan LEE ,  Yongsun KO

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L29/42356 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a fin structure on a substrate, device isolation patterns on the substrate at opposite sides of the fin structure, a gate electrode intersecting the fin structure and the device isolation patterns, a gate dielectric pattern between the gate electrode and the fin structure and between the gate electrode and the device isolation patterns, and gate spacers on opposite sidewalls of the gate electrode, wherein, on each of the device isolation patterns, a bottom surface of the gate dielectric pattern is at a higher level than bottom surfaces of the gate spacers.

Abstract translation: 半导体器件包括在衬底上的翅片结构，在鳍结构的相对侧的衬底上的器件隔离图案，与鳍结构相交的栅电极和器件隔离图案，栅电极和鳍结构之间的栅极电介质图案 并且在栅极电极和器件隔离图案之间以及栅极电极的相对侧壁上的栅极间隔物，其中，在每个器件隔离图案上，栅极电介质图案的底表面处于比所述栅极电极的底表面更高的水平 门垫片。