公开(公告)号：US09859432B2

公开(公告)日：2018-01-02

申请号：US15245549

申请日：2016-08-24

申请人： Samsung Electronics Co., Ltd.

发明人： Yongsun Ko ,  Sangjine Park ,  Hagju Cho ,  Byungjae Park ,  Jeongnam Han

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/423

CPC分类号： H01L29/785 ,  H01L21/823821 ,  H01L29/0649 ,  H01L29/42372 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848

摘要： A semiconductor device may include a pair of active patterns spaced apart from each other in a first direction, a pair of gate electrodes intersecting the pair of the active patterns in a second direction crossing the first direction, gate spacers on sidewalls of the pair of the active patterns, source/drain regions on the pair active patterns between the pair of the gate electrodes, and a spacer protection pattern between the pair of the gate electrodes and between the pair of the active patterns. The spacer protection pattern may be commonly connected to the gate spacers.

公开(公告)号：US09627481B2

公开(公告)日：2017-04-18

申请号：US15051056

申请日：2016-02-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Byungjae Park ,  Myeongcheol Kim ,  Hagju Cho

IPC分类号： H01L29/08 ,  H01L29/78 ,  H01L27/088

CPC分类号： H01L29/0847 ,  H01L27/0886 ,  H01L29/41791 ,  H01L29/6681 ,  H01L29/7854 ,  H01L29/7856

摘要： A semiconductor device includes a multi-fin active region having a plurality of sub-fins sequentially arranged on a substrate. A gate electrode crosses the multi-fin active region. Source/drain regions are disposed on the sub-fins except a first sub-fin and a last sub-fin. A contact plug is disposed on the source/drain regions.