PHOTORESIST COMPOSITIONS AND METHODS FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

    公开(公告)号:US20230130025A1

    公开(公告)日:2023-04-27

    申请号:US17938338

    申请日:2022-10-06

    Abstract: A photoresist composition including an organometallic compound, and a method for fabricating a semiconductor device using the same are provided. The photoresist composition may include an organometallic compound, a radical sensitizer including a structure of Chemical formula 2-1 or Chemical formula 2-2, and a solvent.
    In Chemical formula 2-1, A1 is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, and R1, R2 and R3 are each independently hydrogen, a halogen, a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, or a hetero-functional group.
    In Chemical formula 2-2, A2 is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, and R4 and R5 are each independently hydrogen, a halogen, a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, or a hetero-functional group.

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