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公开(公告)号:US20230076633A1
公开(公告)日:2023-03-09
申请号:US17902142
申请日:2022-09-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sungkun KANG , Chawon KOH , Hyunjae LEE , Tsunehiro NISHI
IPC: H01L21/027 , H01L21/311 , H01J37/32 , G03F7/004
Abstract: A method of manufacturing a semiconductor device, the method including forming a lower film on a substrate; forming a metal-containing photoresist material film on the lower film; patterning the metal-containing photoresist material film to form a photoresist pattern including openings therein such that a scum remains on the lower film; performing a descum operation to remove the scum from the lower film; and etching the lower film using the photoresist pattern, wherein performing the descum operation includes providing the substrate to a processing chamber; generating oxygen plasma; and reacting the scum with the oxygen plasma.
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公开(公告)号:US20240210832A1
公开(公告)日:2024-06-27
申请号:US18344992
申请日:2023-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Chawon KOH , Sungkun KANG , Tsunehiro NISHI , Young Joo CHOI
CPC classification number: G03F7/168 , G03F7/0042 , G03F7/0045 , G03F7/0048 , G03F7/0392 , G03F7/38
Abstract: Disclosed photoresist topcoat compositions including a polymer including at least one of the first structural units represented by Chemical Formula 1 or Chemical Formula 2, a thermal acid generator (TAG), and a solvent; and a method of forming patterns using the photoresist topcoat composition.
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公开(公告)号:US20240128082A1
公开(公告)日:2024-04-18
申请号:US18372212
申请日:2023-09-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Inoue NAOKI , Tsunehiro NISHI
IPC: H01L21/033 , H01L21/027 , H01L21/311
CPC classification number: H01L21/0335 , H01L21/0274 , H01L21/0332 , H01L21/0337 , H01L21/31144
Abstract: A method of manufacturing a semiconductor device includes sequentially disposing a hard mask layer, an organic layer, and a metal-containing photoresist layer on a substrate, patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer, implanting ions into the first region of the organic layer exposed by the first mask pattern, removing the first mask pattern and a second region of the organic layer that is not ion-implanted to form a second mask pattern exposing a partial region of the hard mask layer, and removing the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern.
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公开(公告)号:US20230130025A1
公开(公告)日:2023-04-27
申请号:US17938338
申请日:2022-10-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Cha Won KOH , Tsunehiro NISHI , Ji Young PARK , Dong Il SHIN , Chang Soo WOO , Min Young LEE , Hyun Jae LEE
Abstract: A photoresist composition including an organometallic compound, and a method for fabricating a semiconductor device using the same are provided. The photoresist composition may include an organometallic compound, a radical sensitizer including a structure of Chemical formula 2-1 or Chemical formula 2-2, and a solvent.
In Chemical formula 2-1, A1 is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, and R1, R2 and R3 are each independently hydrogen, a halogen, a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, or a hetero-functional group.
In Chemical formula 2-2, A2 is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, and R4 and R5 are each independently hydrogen, a halogen, a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, or a hetero-functional group.-
公开(公告)号:US20220299874A1
公开(公告)日:2022-09-22
申请号:US17696030
申请日:2022-03-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Chawon KOH , Tsunehiro NISHI , Hyunwoo KIM , Jinkyun LEE , Junil KIM , Hyuntaek OH , Jihoon WOO , Seungsoo CHOI
Abstract: A method of manufacturing a semiconductor device, the method including forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000; exposing a partial region of the photoresist material layer; removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and processing the lower film using the photoresist pattern, wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer.
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公开(公告)号:US20240255848A1
公开(公告)日:2024-08-01
申请号:US18449156
申请日:2023-08-14
Applicant: Geun Su Lee , Samsung Electronics Co., Ltd.
Inventor: Chawon KOH , Yeon Hee SEONG , Tsunehiro NISHI , Geun Su LEE , Sung Jae JUNG , Moo Hyun KOH , Ji Young PARK , Seungyeol BAEK
IPC: G03F7/004 , C07F7/22 , C07F9/6596 , G03F7/075 , G03F7/16 , G03F7/38 , H01L21/027
CPC classification number: G03F7/0045 , C07F7/2224 , C07F9/6596 , G03F7/0757 , G03F7/168 , G03F7/38 , H01L21/0274
Abstract: The present disclosure relates to a semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and a method of forming patterns by using the semiconductor photoresist composition.
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公开(公告)号:US20240142874A1
公开(公告)日:2024-05-02
申请号:US18381678
申请日:2023-10-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Chawon KOH , Jiyoung PARK , Seungyeol BAEK , Tsunehiro NISHI , Jinkyu HAN
CPC classification number: G03F7/039 , G03F7/0045
Abstract: A non-chemically amplified resist composition includes a photo-decomposable organic resin including a C—O bond in a main chain thereof; an acidic chain scission enhancer; and a solvent.
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公开(公告)号:US20240130212A1
公开(公告)日:2024-04-18
申请号:US18379828
申请日:2023-10-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Inoue NAOKI , Tsunehiro NISHI , Yonghoon MOON
IPC: H10K71/20
CPC classification number: H10K71/233
Abstract: A method of manufacturing a semiconductor device, including forming a plurality of first organic patterns spaced apart from one another in one direction on a supporting layer, wherein the plurality of first organic patterns include ion-implanted patterns, forming a plurality of inorganic patterns on the supporting layer that are in contact with the plurality of first organic patterns and spaced apart from one other in the one direction, wherein the inorganic patterns include ion-implanted patterns, forming a plurality of second organic patterns arranged between the plurality of inorganic patterns on the supporting layer, wherein the second organic patterns include ion-implanted patterns, and selectively etching the ion-implanted inorganic patterns to form a plurality of space patterns that are arranged between the ion-implanted first organic patterns and the ion-implanted second organic patterns.
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公开(公告)号:US20230314956A1
公开(公告)日:2023-10-05
申请号:US18125923
申请日:2023-03-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sungkun KANG , Chawon KOH , Tsunehiro NISHI
CPC classification number: G03F7/70033 , G03F7/0042 , G03F7/0025 , G03F7/0046 , G03F7/168 , G03F1/38 , H01J37/32458
Abstract: A substrate processing method includes forming a layer of an inorganic photoresist composition on a substrate, irradiating the layer of the inorganic photoresist composition with extreme ultraviolet (EUV) light using an exposure mask, baking the layer of the inorganic photoresist composition, which is irradiated with EUV light, developing the layer of the inorganic photoresist composition using a developer to form a first inorganic photoresist pattern, performing plasma treatment on the first inorganic photoresist pattern to form a second inorganic photoresist pattern, and processing the substrate using the second inorganic photoresist pattern as a process mask, wherein the plasma treatment uses plasma of a process gas capable of generating hydrogen ions and fluorine ions.
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公开(公告)号:US20230151159A1
公开(公告)日:2023-05-18
申请号:US17742667
申请日:2022-05-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Inoue NAOKI , Hyunwoo KIM , Tsunehiro NISHI
IPC: C08G79/08 , H01L21/311 , H01L21/033 , H01L21/027 , H01L27/108 , H01L49/02
CPC classification number: C08G79/08 , H01L21/0271 , H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L27/10855 , H01L28/92
Abstract: A hardmask-forming compound, a hardmask composition, and a method of manufacturing an integrated circuit (IC), the hardmask-forming compound including a moiety represented by Formula 1:
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