中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.033 seconds)

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230076633A1

    公开(公告)日：2023-03-09

    申请号：US17902142

    申请日：2022-09-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sungkun KANG ,  Chawon KOH ,  Hyunjae LEE ,  Tsunehiro NISHI

    IPC: H01L21/027 ,  H01L21/311 ,  H01J37/32 ,  G03F7/004

    Abstract: A method of manufacturing a semiconductor device, the method including forming a lower film on a substrate; forming a metal-containing photoresist material film on the lower film; patterning the metal-containing photoresist material film to form a photoresist pattern including openings therein such that a scum remains on the lower film; performing a descum operation to remove the scum from the lower film; and etching the lower film using the photoresist pattern, wherein performing the descum operation includes providing the substrate to a processing chamber; generating oxygen plasma; and reacting the scum with the oxygen plasma.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明公开
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240128082A1

    公开(公告)日：2024-04-18

    申请号：US18372212

    申请日：2023-09-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Inoue NAOKI ,  Tsunehiro NISHI

    IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311

    CPC classification number: H01L21/0335 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144

    Abstract: A method of manufacturing a semiconductor device includes sequentially disposing a hard mask layer, an organic layer, and a metal-containing photoresist layer on a substrate, patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer, implanting ions into the first region of the organic layer exposed by the first mask pattern, removing the first mask pattern and a second region of the organic layer that is not ion-implanted to form a second mask pattern exposing a partial region of the hard mask layer, and removing the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern.

    PHOTORESIST COMPOSITIONS AND METHODS FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
    4.
    发明申请
    PHOTORESIST COMPOSITIONS AND METHODS FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME 有权

    公开(公告)号：US20230130025A1

    公开(公告)日：2023-04-27

    申请号：US17938338

    申请日：2022-10-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Cha Won KOH ,  Tsunehiro NISHI ,  Ji Young PARK ,  Dong Il SHIN ,  Chang Soo WOO ,  Min Young LEE ,  Hyun Jae LEE

    IPC: G03F7/029 ,  G03F7/039 ,  G03F7/004 ,  G03F7/20

    Abstract: A photoresist composition including an organometallic compound, and a method for fabricating a semiconductor device using the same are provided. The photoresist composition may include an organometallic compound, a radical sensitizer including a structure of Chemical formula 2-1 or Chemical formula 2-2, and a solvent.
    In Chemical formula 2-1, A1 is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, and R1, R2 and R3 are each independently hydrogen, a halogen, a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, or a hetero-functional group.
    In Chemical formula 2-2, A2 is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, and R4 and R5 are each independently hydrogen, a halogen, a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, or a hetero-functional group.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220299874A1

    公开(公告)日：2022-09-22

    申请号：US17696030

    申请日：2022-03-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chawon KOH ,  Tsunehiro NISHI ,  Hyunwoo KIM ,  Jinkyun LEE ,  Junil KIM ,  Hyuntaek OH ,  Jihoon WOO ,  Seungsoo CHOI

    IPC: G03F7/038 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

    Abstract: A method of manufacturing a semiconductor device, the method including forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000; exposing a partial region of the photoresist material layer; removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and processing the lower film using the photoresist pattern, wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING DOUBLE PATTERNING PROCESS
    8.
    发明公开
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING DOUBLE PATTERNING PROCESS 审中-公开

    公开(公告)号：US20240130212A1

    公开(公告)日：2024-04-18

    申请号：US18379828

    申请日：2023-10-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Inoue NAOKI ,  Tsunehiro NISHI ,  Yonghoon MOON

    IPC: H10K71/20

    CPC classification number: H10K71/233

    Abstract: A method of manufacturing a semiconductor device, including forming a plurality of first organic patterns spaced apart from one another in one direction on a supporting layer, wherein the plurality of first organic patterns include ion-implanted patterns, forming a plurality of inorganic patterns on the supporting layer that are in contact with the plurality of first organic patterns and spaced apart from one other in the one direction, wherein the inorganic patterns include ion-implanted patterns, forming a plurality of second organic patterns arranged between the plurality of inorganic patterns on the supporting layer, wherein the second organic patterns include ion-implanted patterns, and selectively etching the ion-implanted inorganic patterns to form a plurality of space patterns that are arranged between the ion-implanted first organic patterns and the ion-implanted second organic patterns.

    SUBSTRATE PROCESSING METHOD
    9.
    发明公开
    SUBSTRATE PROCESSING METHOD 审中-公开

    公开(公告)号：US20230314956A1

    公开(公告)日：2023-10-05

    申请号：US18125923

    申请日：2023-03-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sungkun KANG ,  Chawon KOH ,  Tsunehiro NISHI

    IPC: G03F7/00 ,  G03F7/004 ,  G03F7/16 ,  G03F1/38 ,  H01J37/32

    CPC classification number: G03F7/70033 ,  G03F7/0042 ,  G03F7/0025 ,  G03F7/0046 ,  G03F7/168 ,  G03F1/38 ,  H01J37/32458

    Abstract: A substrate processing method includes forming a layer of an inorganic photoresist composition on a substrate, irradiating the layer of the inorganic photoresist composition with extreme ultraviolet (EUV) light using an exposure mask, baking the layer of the inorganic photoresist composition, which is irradiated with EUV light, developing the layer of the inorganic photoresist composition using a developer to form a first inorganic photoresist pattern, performing plasma treatment on the first inorganic photoresist pattern to form a second inorganic photoresist pattern, and processing the substrate using the second inorganic photoresist pattern as a process mask, wherein the plasma treatment uses plasma of a process gas capable of generating hydrogen ions and fluorine ions.

Patent Agency Ranking