公开(公告)号：US20160365374A1

公开(公告)日：2016-12-15

申请号：US15249785

申请日：2016-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-Jun PARK ,  Seung-Hun SHIN ,  Chang-Rok MOON ,  Tae-Seok OH ,  June-Taeg LEE

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

Abstract: A stack type image sensor may include: a first chip including a via isolation trench penetrating a first substrate, a via isolation layer including an insulation material in the via isolation trench, a first conductive layer on the first substrate, and a first insulation layer; a second chip including a second conductive layer on a second substrate, and a second insulation layer contacting the first insulation layer; a first via trench penetrating the first substrate to expose the second conductive layer with respect to the trench; and a first through via formed in the first via trench, and including a third conductive layer insulated from the first substrate by the via isolation layer, the third conductive layer electrically connecting the first conductive layer to the second conductive layer. The third conductive layer may be formed in the via isolation trench.

公开(公告)号：US20170025461A1

公开(公告)日：2017-01-26

申请号：US15285018

申请日：2016-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun-Ki LEE ,  Chang-Rok MOON ,  Min-Wook JUNG

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687

Abstract: An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

Abstract translation: 提供图像传感器。 图像传感器包括基板，第一层间绝缘层，第一金属线和屏蔽结构。 衬底包括像素阵列，外围电路区域和布置在像素阵列和外围电路区域之间的接口区域。 第一层间绝缘层形成在基板的第一表面上。 第一金属线设置在像素阵列的第一层间绝缘层上。 第二层间绝缘层设置在第一层间绝缘层上，其中第二层间绝缘层覆盖第一金属线。 屏蔽结构通过衬底在屏蔽结构中电绝缘衬底的像素阵列和外围电路区域的界面区域中。

公开(公告)号：US20160035775A1

公开(公告)日：2016-02-04

申请号：US14660006

申请日：2015-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ha-Kyu CHOI ,  Chang-Rok MOON

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: An image sensor includes an inorganic color filter, an organic color filter, and a metal pattern. The inorganic color filter is on a support substrate. The organic color filter is on the support substrate. The organic color filter is spaced apart from the inorganic color filter. The metal pattern is between the inorganic color filter and the organic color filter.

Abstract translation: 图像传感器包括无机滤色器，有机滤色器和金属图案。 无机滤色器在支撑基板上。 有机滤色器在支撑基板上。 有机滤色器与无机滤色器间隔开。 金属图案位于无机滤色器和有机彩色滤光片之间。

公开(公告)号：US20150311241A1

公开(公告)日：2015-10-29

申请号：US14602427

申请日：2015-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung-Jun PARK ,  Seung-Hun SHIN ,  Chang-Rok MOON ,  Tae-Seok OH ,  June-Taeg LEE

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

Abstract: A stack type image sensor may include: a first chip including a via isolation trench penetrating a first substrate, a via isolation layer including an insulation material in the via isolation trench, a first conductive layer on the first substrate, and a first insulation layer; a second chip including a second conductive layer on a second substrate, and a second insulation layer contacting the first insulation layer; a first via trench penetrating the first substrate to expose the second conductive layer with respect to the trench; and a first through via formed in the first via trench, and including a third conductive layer insulated from the first substrate by the via isolation layer, the third conductive layer electrically connecting the first conductive layer to the second conductive layer. The third conductive layer may be formed in the via isolation trench.

Abstract translation: 堆叠型图像传感器可以包括：第一芯片，其包括穿过第一衬底的通孔隔离沟槽，在通孔隔离沟槽中包括绝缘材料的通孔隔离层，第一衬底上的第一导电层和第一绝缘层; 第二芯片，包括在第二基板上的第二导电层，以及与第一绝缘层接触的第二绝缘层; 穿过所述第一衬底以相对于所述沟槽暴露所述第二导电层的第一通孔沟槽; 以及形成在所述第一通孔沟槽中的第一通孔，并且包括通过所述通孔隔离层与所述第一基板绝缘的第三导电层，所述第三导电层将所述第一导电层电连接到所述第二导电层。 第三导电层可以形成在通孔隔离沟槽中。