SEMICONDUCTOR DEVICE
    1.
    发明公开

    公开(公告)号:US20240079328A1

    公开(公告)日:2024-03-07

    申请号:US18133198

    申请日:2023-04-11

    Abstract: A semiconductor device includes a logic cell region on a substrate, an interconnection layer on the logic cell region, the interconnection layer including a plurality of metal layers on the logic cell region, and a first vertical structure in the interconnection layer, where the first vertical structure vertically connects the logic cell region to an uppermost metal layer of the plurality of metal layers, each of the plurality of unit structures includes a lower via, a lower interconnection line, an upper via, and an upper interconnection line, the lower interconnection line and the upper interconnection line of each respective unit structure of the plurality of unit structures cross each other, and the upper interconnection line of each of the plurality of unit structures includes a first upper interconnection line.

    HIGH-SPEED FLIP FLOP CIRCUIT INCLUDING DELAY CIRCUIT

    公开(公告)号:US20210409009A1

    公开(公告)日:2021-12-30

    申请号:US17340215

    申请日:2021-06-07

    Abstract: A flip flop includes a master latch and a slave latch. The master latch includes a delay circuit configured to receive a clock signal and generate a first internal signal, and is configured to generate an internal output signal by latching a data signal based on the first internal signal. The slave latch is configured to generate a final signal by latching the internal output signal. The delay circuit is further configured to generate the first internal signal by delaying the clock signal by a delay time when the clock signal has a first logic level and generate the first internal signal based on the data signal when the clock signal has a second logic level.

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