公开(公告)号：US09024294B2

公开(公告)日：2015-05-05

申请号：US14249002

申请日：2014-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han Kyu Seong ,  Hun Jae Chung ,  Jung Ja Yang ,  Cheol Soo Sone

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/00 ,  H01L33/04 ,  H01L27/15 ,  H01L33/16 ,  H01L33/08 ,  H01L33/24

CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  Y10S977/816

Abstract: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.

Abstract translation: 公开了III族氮化物纳米棒发光器件及其制造方法。 III族氮化物纳米棒发光器件包括：基板，形成在基板上的绝缘膜，并且包括暴露基板的不同直径的部分的多个开口，以及分别形成在第一导电III族氮化物纳米棒 所述多个开口，其中所述第一导电III族氮化物纳米棒中的每一个具有有源层和在其表面上顺序地形成的第二导电半导体层。

公开(公告)号：US20130214317A1

公开(公告)日：2013-08-22

申请号：US13764228

申请日：2013-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Soo Kim ,  Joon-Seop Kwak ,  Ki Man Kang ,  Jin Hyun Lee ,  Yu Seung Kim ,  Cheol Soo Sone

IPC: H01L33/64

CPC classification number: H01L33/641 ,  H01L33/14 ,  H01L33/32

Abstract: There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment.According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.