公开(公告)号：US20230170222A1

公开(公告)日：2023-06-01

申请号：US17842962

申请日：2022-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Hoon KWON ,  Chung Ki MIN ,  Bo Un YOON ,  Ki Hoon JANG

IPC: H01L21/306 ,  B24B37/04 ,  B24B57/02

CPC classification number: H01L21/30625 ,  B24B37/042 ,  B24B57/02

Abstract: A method for fabricating a semiconductor device includes providing a polishing pad which includes a first region and a second region separated from each other by a fence, loading a wafer onto the first region, providing a slurry solution onto the first region, providing an ultrapure water onto the second region, turning the polishing pad to polish a surface of the wafer, and unloading the wafer from the polishing pad after polishing on the surface of the wafer is completed, wherein the fence includes a first fence extending from a center of the polishing pad toward an edge of the polishing pad in a first horizontal direction, and a second fence extending from the center of the polishing pad toward the edge of the polishing pad in a second horizontal direction different from the first horizontal direction.